-
3
-
-
0027852012
-
-
J. J. Van Glabbeek, G. A. C. M. Spierings, M. J. E. Ulenaers, G. J. M. Dormans, and P. K. Larsen, Mater. Res. Soc. Symp. Proc. 310, 127 (1993).
-
(1993)
Mater. Res. Soc. Symp. Proc.
, vol.310
, pp. 127
-
-
Van Glabbeek, J.J.1
Spierings, G.A.C.M.2
Ulenaers, M.J.E.3
Dormans, G.J.M.4
Larsen, P.K.5
-
4
-
-
0031331473
-
-
C. E. Farrell, K. R. Milkove, C. Wang, and D. E. Kotecki, Integr. Ferroelectr. 16, 109 (1997).
-
(1997)
Integr. Ferroelectr.
, vol.16
, pp. 109
-
-
Farrell, C.E.1
Milkove, K.R.2
Wang, C.3
Kotecki, D.E.4
-
7
-
-
0342958206
-
-
L.-H. Chang, E. Apen, M. Kottke, and C. Tracy, J. Vac. Sci. Technol. A 16, 1489 (1998).
-
(1998)
J. Vac. Sci. Technol. A
, vol.16
, pp. 1489
-
-
Chang, L.-H.1
Apen, E.2
Kottke, M.3
Tracy, C.4
-
10
-
-
0000695733
-
-
T. Shibano, K. Nakamura, T. Takenaga, and K. Ono, J. Vac. Sci. Technol. A 17, 799 (1999).
-
(1999)
J. Vac. Sci. Technol. A
, vol.17
, pp. 799
-
-
Shibano, T.1
Nakamura, K.2
Takenaga, T.3
Ono, K.4
-
11
-
-
0032648337
-
-
J. H. Kim, S.-I. Woo, B. Y. Nam, and W. J. Yoo, IEEE Trans. Electron Devices 46, 984 (1999).
-
(1999)
IEEE Trans. Electron Devices
, vol.46
, pp. 984
-
-
Kim, J.H.1
Woo, S.-I.2
Nam, B.Y.3
Yoo, W.J.4
-
12
-
-
0029254328
-
-
S. Yokoyama, Y. Ito, K. Ishihara, K. Hamada, S. Ohnishi, J. Kudo, and K. Sakiyama, Jpn. J. Appl. Phys., Part 1 34, 767 (1995).
-
(1995)
Jpn. J. Appl. Phys., Part 1
, vol.34
, pp. 767
-
-
Yokoyama, S.1
Ito, Y.2
Ishihara, K.3
Hamada, K.4
Ohnishi, S.5
Kudo, J.6
Sakiyama, K.7
-
13
-
-
0030122529
-
-
W. J. Yoo, J. H. Hahm, H. W. Kim, C. O. Jung, Y. B. Koh, and M. Y. Lee, Jpn. J. Appl. Phys., Part 1 35, 2501 (1995).
-
(1995)
Jpn. J. Appl. Phys., Part 1
, vol.35
, pp. 2501
-
-
Yoo, W.J.1
Hahm, J.H.2
Kim, H.W.3
Jung, C.O.4
Koh, Y.B.5
Lee, M.Y.6
-
16
-
-
0031360253
-
-
A. Cofer, P. Rajora, S. DeOrnellas, and D. Keil, Integr. Ferroelectr. 16, 53 (1997).
-
(1997)
Integr. Ferroelectr.
, vol.16
, pp. 53
-
-
Cofer, A.1
Rajora, P.2
DeOrnellas, S.3
Keil, D.4
-
17
-
-
0032382954
-
-
K.-H. Kwon, C.-I. Kim, S. J. Yun, and G.-Y. Yeom, J. Vac. Sci. Technol. A 16, 2772 (1998).
-
(1998)
J. Vac. Sci. Technol. A
, vol.16
, pp. 2772
-
-
Kwon, K.-H.1
Kim, C.-I.2
Yun, S.J.3
Yeom, G.-Y.4
-
19
-
-
0033157723
-
-
S. Delprat, M. Chaker, and J. Margot, Jpn. J. Appl. Phys., Part 1 38, 4488 (1999).
-
(1999)
Jpn. J. Appl. Phys., Part 1
, vol.38
, pp. 4488
-
-
Delprat, S.1
Chaker, M.2
Margot, J.3
-
20
-
-
3342983295
-
-
US patent No. 4,810,933, March 1989
-
M. Moisan and Z. Zakrzewski, US patent No. 4,810,933, March 1989; M. Moisan, J. Margot, and Z. Zakrzewski, in High Density Plasma Sources: Design, Physics and Performance, edited by O.A. Popov (Noyes, Park Ridge, New Jersey, 1995).
-
-
-
Moisan, M.1
Zakrzewski, Z.2
-
21
-
-
0003638740
-
-
edited by O.A. Popov Noyes, Park Ridge, New Jersey
-
M. Moisan and Z. Zakrzewski, US patent No. 4,810,933, March 1989; M. Moisan, J. Margot, and Z. Zakrzewski, in High Density Plasma Sources: Design, Physics and Performance, edited by O.A. Popov (Noyes, Park Ridge, New Jersey, 1995).
-
(1995)
High Density Plasma Sources: Design, Physics and Performance
-
-
Moisan, M.1
Margot, J.2
Zakrzewski, Z.3
-
22
-
-
3343000386
-
-
Kluwer, Dordrecht
-
J. Margot, M. Chaker, M. Moisan, L. St-Onge, F. Bounasri, A. Dallaire, and E. Gat, NATO ASI on Plasma Processing of Semiconductors, Series E: Appl. Sciences (Kluwer, Dordrecht, 1997).
-
(1997)
NATO ASI on Plasma Processing of Semiconductors, Series E: Appl. Sciences
-
-
Margot, J.1
Chaker, M.2
Moisan, M.3
St-Onge, L.4
Bounasri, F.5
Dallaire, A.6
Gat, E.7
-
23
-
-
0042720466
-
-
J. Margot, M. Chaker, L. St-Onge, M. Tabbal, A. Aliouchouche, O. Pauna, C. Alinot, and C. Kliagine, J. Phys. IV 7, C4-295 (1997).
-
(1997)
J. Phys. IV
, vol.7
-
-
Margot, J.1
Chaker, M.2
St-Onge, L.3
Tabbal, M.4
Aliouchouche, A.5
Pauna, O.6
Alinot, C.7
Kliagine, C.8
-
26
-
-
0042844459
-
-
Sect. B
-
J. E. Allen, R. L. F. Boyd, and P. Reynolds, Proc. Phys. Soc. London, Sect. B 70, 297 (1957).
-
(1957)
Proc. Phys. Soc. London
, vol.70
, pp. 297
-
-
Allen, J.E.1
Boyd, R.L.F.2
Reynolds, P.3
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