Thermal Effects in JFET and MOSFET Devices at Cryogenic Temperatures

IEEE Transactions on Electron Devices

Volumn 19, Issue 8, 1972, Pages 933-942

  Sesnic, Steve S ^a   Craig, George R ^b  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b Air Force Flight Test Center Edwards Air Force Base ^*  (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000181447     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1972.17522     Document Type: Article

References (24)

1. E. Elad and M. Nakamura, “Germanium FET-A novel element for low noise preamplifiers,” Nucl. Instrum. Methods, vol. 54, pp. 308-310, 1967.
2. C. G. Rogers and A. K. Jonscher, “Operation of field-effect transistors at liquid helium temperature,” Electron. Lett., vol. 3, pp. 210-211, May 1967.
3. R. R. Green, “MOSFET operation at 4.2 K,” Rev. Sci. Instr., vol. 39, pp. 1495-1497, Oct. 1968.
4. D. S. Miyoshi and R. M. Cotts, “Helium cooled radio frequency preamplifiers for use in NMR,” Rev. Sci. Instr., vol. 39, pp. 1881–1884, Dec. 1968.
5. R. A. Spaulding, “Field-effect transistor noise at low temperatures,” Proc, IEEE (Lett.), vol. 56, pp. 886–887, May 1968.
6. E. C. Kelm, “Operation of a germanium FET at low temperatures, “ Rev. Sci. Instr., vol. 39, pp. 775-776, May 1968.
7. C. G. Gardner, Jr., and C. W. Bostian, “Pinch-off voltage shifts in MOSFET's at helium temperatures,” Proc. IEEE (Lett.), vol. 56, p. 2085, Nov. 1968.
8. R. R. Wagner, P. T. Anderson, and B. Bertman, “Junction field effect transistors at 4.2 K,” Rev. Sci. Instr., vol. 41, pp. 917–919, July 1970.
9. C. G. Rogers, “MOST's at cryogenic temperatures,” Solid-State Electron., vol. 11, pp. 1079-1091, Nov. 1968.
10. S. Christensson and I. Lundström, “Low frequency noise in MOS Transistors-II,” Solid State Electron., vol. 11, pp. 813-820, Sept. 1968.
11. A. K. Jonscher, “Semiconductors at cryogenic temperatures,” Proc. IEEE, vol.52, pp. 1092-1104, Oct. 1964.
12. S. S. Sesnic, G. K. Craig, J. W. Champion, and B. Leskovar, “Investigations of germanium FET and MOSFET at LHe temperatures,” in Conf. Rec., 1969 IEEE Southwestern Conf., 1969, pp. 17-D-1-17-D-5.
13. J. A. Carruthers, T. H. Geballe, H. M. Rosenberg, and J. M. Ziman, “The thermal conductivity of germanium and silicon between 2 K and 300 K,” Proc. Roy. Soc., Ser. A., vol. 239, pp. 502-514, Jan. 1957.
14. N. C. Weast, Handbook of Chemistry and Physics. Cleveland, Ohio: Chemical Rubber Co., 1966-1967, p. D-94.
15. V. J. Johnson, Ed., A Compendium of the Properties of Materials at Low Temperatures (Phase I). Washington, D. C.: Office of Technical Services, U. S. Dept. Commerce, p. 3301.
16. C. T. Sah, “Theory of low-frequency generation noise in junction-gate field-effect transistors,” Proc. IEEE, vol. 52, pp. 795–814, July 1964.
17. P. O. Lauritzen, “Low-frequency generation noise in junction field effect transistors,” Solid-State Electron., vol. 8, pp. 41–58, Jan. 1965.
18. A. van der Ziel, “Thermal noise in field-effect transistors,” Proc. IRE. vol. 50., pp. 1808–1812. Aug. 1962.
19. C. T. Sah and F. H. Hielscher, “Evidence of surface origin of the 1/f noise,” Phys. Rev. Lett., vol. 17, pp. 956-958, Oct. 1966.
20. R. H. Kingston and A. L. McWhorter, “Relaxation time of surface states on Ge,” Phys. Rev., vol. 103, pp. 534-540, Aug. 1956.
21. S. Christensson, I. Lundstrom, and C. Svensson, “Low frequency noise in MOS transistors-I;” Solid-State Electron., vol. 11, pp. 797–812, Sept. 1968.
22. E. A. Leventhal, “Derivation of 1/f noise in silicon inversion layers from carrier motion in a surface band,” Solid-State Electron., vol. 11, pp. 621-627 June 1968.
23. A. G. Jordan and N. A. Jordan, “Theory of noise in metal oxide semiconductor device,” IEEE Trans. Electron Devices, vol. ED-12, pp. 148-156, Mar. 1965.
24. F. M. Klaassen and J. R. Robinson, “Anomalous noise behavior of the junction-gate field-effect transistor at low temperatures,” IEEE Trans. Electron Devices, vol. ED-17, pp. 852–857, Oct. 1970.