Electrical properties of SOI n-MOSFETs under nonisothermal lattice temperature

Solid-State Electronics

Volumn 41, Issue 4, 1997, Pages 567-573

  Kim, Jin Yang ^a   Park, Young June ^a   Min, Hong Shick ^a  

^a Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; DEGRADATION; ELECTRIC PROPERTIES; HYSTERESIS; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY; THERMAL EFFECTS;

NONISOTHERMAL LATTICE TEMPERATURE; SOFTWARE PACKAGE SNU-2D;

MOSFET DEVICES;

EID: 0031119242     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(96)00216-X     Document Type: Article

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