Thermal Effects in n-Channel Enhancement MOSFET's Operated at Cryogenic Temperatures

IEEE Transactions on Electron Devices

Volumn 34, Issue 1, 1987, Pages 107-113

  Foty, Daniel P ^a   Titcomb, Stephen L ^a  

^a UNIVERSITY OF VERMONT   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYOGENICS - LOW TEMPERATURE PHENOMENA; SEMICONDUCTOR DEVICES, MOS;

CHANNEL MOBILITY TEMPERATURE DEPENDENT BEHAVIOR; COMPLEMENTARY MOS (CMOS); DRAIN CURRENT TRANSIENTS; N-CHANNEL ENHANCED-MODE MOSFET;

SEMICONDUCTOR DEVICES, MOSFET;

EID: 0023148711     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/T-ED.1987.22892     Document Type: Article

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