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Volumn 14, Issue 3, 1993, Pages 152-154

Experimental Determination of Self Heating in Submicrometer MOS Transistors Operated in a Liquid-Helium Ambient

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; ELECTRIC INVERTERS; HEATING; SEMICONDUCTOR DEVICE MODELS; TEMPERATURE MEASUREMENT; THERMAL EFFECTS; THERMODYNAMIC PROPERTIES; TRANSISTORS;

EID: 0027553141     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.215141     Document Type: Article
Times cited : (9)

References (9)
  • 1
    • 0000181447 scopus 로고
    • Thermal effects in JFET and MOSFET devices at cryogenic temperatures
    • S. S. Sesnic and G. R. Craig, “Thermal effects in JFET and MOSFET devices at cryogenic temperatures,” IEEE Trans. Electron Devices, vol. ED-19, no. 8, pp. 933–942, 1972.
    • (1972) IEEE Trans. Electron Devices , vol.ED-19 , Issue.8 , pp. 933-942
    • Sesnic, S.S.1    Craig, G.R.2
  • 2
    • 0023148711 scopus 로고
    • Thermal effects in n-channel enhancement MOSFET’s operated at cryogenic temperatures
    • D. P. Foty and S. L. Titcomb, “Thermal effects in n-channel enhancement MOSFET’s operated at cryogenic temperatures,” IEEE Trans. Electron Devices, vol. ED-34, no. 1, pp. 107–113, 1987.
    • (1987) IEEE Trans. Electron Devices , vol.ED-34 , Issue.1 , pp. 107-113
    • Foty, D.P.1    Titcomb, S.L.2
  • 3
    • 0024717010 scopus 로고
    • Thermal effects in p-channel MOSFET’s at low temperatures
    • D. Foty, “Thermal effects in p-channel MOSFET’s at low temperatures,” IEEE Trans. Electron Devices, vol. 36, no. 8, pp. 1542–1544, 1989.
    • (1989) IEEE Trans. Electron Devices , vol.36 , Issue.8 , pp. 1542-1544
    • Foty, D.1
  • 4
    • 84948611519 scopus 로고    scopus 로고
    • Selfheating effects in silicon resistors operated at cryogenic ambient temperatures
    • to be published in Solid-State Electron
    • E. A. Gutierrez-D., L. Deferm and G. Declerck, “Selfheating effects in silicon resistors operated at cryogenic ambient temperatures,” to be published in Solid-State Electron.
    • Gutierrez-D, E.A.1    Deferm, L.2    Declerck, G.3
  • 5
    • 0026260665 scopus 로고
    • Measurement of transient heating in a 1.1 m PMOSFET using thermal imaging
    • N. Haik, D. Gat, R. Sadon, and Y. Nissan-Cohen, “Measurement of transient heating in a 1.1µm PMOSFET using thermal imaging,” IEEE Electron Device Lett., vol. 12, no. 11, pp. 611–613, 1991.
    • (1991) IEEE Electron Device Lett. , vol.12 , Issue.11 , pp. 611-613
    • Haik, N.1    Gat, D.2    Sadon, R.3    Nissan-Cohen, Y.4
  • 6
    • 0024719533 scopus 로고
    • Low-temperature operation of silicon dynamic random-access memories
    • P. Wyns and R. L. Anderson, “Low-temperature operation of silicon dynamic random-access memories,” IEEE Trans. Electron Devices, vol. 36, no. 8, pp. 1423–1428, 1989.
    • (1989) IEEE Trans. Electron Devices , vol.36 , Issue.8 , pp. 1423-1428
    • Wyns, P.1    Anderson, R.L.2
  • 7
    • 0026172140 scopus 로고
    • The importance of the internal bulk-source potential on the low temperature kink in NMOST’s
    • L. Deferm, E. Simoen, and C. Claeys, “The importance of the internal bulk-source potential on the low temperature kink in NMOST’s,” IEEE Trans. Electron Devices, vol. 38, pp. 1459–1466, 1991.
    • (1991) IEEE Trans. Electron Devices , vol.38 , pp. 1459-1466
    • Deferm, L.1    Simoen, E.2    Claeys, C.3
  • 8
    • 0024680209 scopus 로고
    • Physical origin of negative differential resistance in SOI transistors
    • L. J. McDaid, S. Hall, P. H. Mellor, and W. Eccleston, “Physical origin of negative differential resistance in SOI transistors,” Electron. Lett., vol. 25, no. 13, pp. 827–828, 1989.
    • (1989) Electron. Lett. , vol.25 , Issue.13 , pp. 827-828
    • McDaid, L.J.1    Hall, S.2    Mellor, P.H.3    Eccleston, W.4
  • 9
    • 0020829017 scopus 로고
    • Modeling thermal effects on MOS I-V characteristics
    • D. K. Sharma and K. V. Ramanathan, “Modeling thermal effects on MOS I-V characteristics,” IEEE Electron Device Lett., vol. EDL-4, no. 10, pp. 362–364, 1983.
    • (1983) IEEE Electron Device Lett. , vol.EDL-4 , Issue.10 , pp. 362-364
    • Sharma, D.K.1    Ramanathan, K.V.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.