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Volumn 36, Issue 8, 1989, Pages 1542-1544

Briefs. Thermal Effects in p-Channel MOSFET's at Low Temperatures

Author keywords

[No Author keywords available]

Indexed keywords

LOW TEMPERATURE ENGINEERING;

EID: 0024717010     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.30968     Document Type: Article
Times cited : (18)

References (16)
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  • 2
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  • 3
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    • Sesnic, S.1    Craig, G.2
  • 4
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    • Modeling thermal effects in MOS I-Vcharacteristics
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    • Sharma, D.1    Ramanathan, K.2
  • 7
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    • pMOSFET parameters at cryogenic temperatures
    • R. Maddox, “pMOSFET parameters at cryogenic temperatures,” IEEE Trans. Electron Devices, vol. ED-23, p. 16, 1976.
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    • Maddox, R.1
  • 8
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  • 9
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    • Wu, S.1    Anderson, R.2
  • 10
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    • The thermal conductivity of germanium and solicon between 2 and 300K
    • J. Carruthers, T. Geballe, H. Rosenburg, and J. Ziman, “The thermal conductivity of germanium and solicon between 2 and 300K,” Proc, Roy. Soc. London, vol. A238, p. 502, 1957.
    • (1957) Proc, Roy. Soc. London , vol.238 A , pp. 502
    • Carruthers, J.1    Geballe, T.2    Rosenburg, H.3    Ziman, J.4
  • 11
    • 36149005932 scopus 로고
    • Thermal conductivity of silicon and germanium from 3K to the melting point
    • C. Glassbrenner and G. Slack, “Thermal conductivity of silicon and germanium from 3K to the melting point,” Phvs. Rev., vol. 134, p. A1058, 1964.
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  • 13
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    • Kent, A.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.