-
1
-
-
0023148711
-
Thermal effects in n-channel enhancement MOSFET's operated at cryogenic temperatures
-
D. Foty and S. Titcomb, “Thermal effects in n-channel enhancement MOSFET's operated at cryogenic temperatures,” IEEE Trans. Electron Devices, vol. ED-34, p. 107, 1987.
-
(1987)
IEEE Trans. Electron Devices
, vol.ED-34
, pp. 107
-
-
Foty, D.1
Titcomb, S.2
-
2
-
-
0016884543
-
Two-dimensional carrier flow in a transistor structure under nonisothermal conditions
-
S. Gaur and D. Navon, “Two-dimensional carrier flow in a transistor structure under nonisothermal conditions,” IEEE Trans. Electron Devices, vol. ED-23, p. 50, 1976.
-
(1976)
IEEE Trans. Electron Devices
, vol.ED-23
, pp. 50
-
-
Gaur, S.1
Navon, D.2
-
3
-
-
0000181447
-
Thermal effects in JFET and MOSFET devices at cryogenic temperatures
-
S. Sesnic and G. Craig, “Thermal effects in JFET and MOSFET devices at cryogenic temperatures,” IEEE Trans. Electron Devices, vol. ED-19, p. 933, 1972.
-
(1972)
IEEE Trans. Electron Devices
, vol.ED-19
, pp. 933
-
-
Sesnic, S.1
Craig, G.2
-
4
-
-
0020829017
-
Modeling thermal effects in MOS I-Vcharacteristics
-
D. Sharma and K. Ramanathan, “Modeling thermal effects in MOS I-Vcharacteristics,” IEEE Electron Device Lett., vol. EDL-4, p. 362, 1983.
-
(1983)
IEEE Electron Device Lett.
, vol.EDL-4
, pp. 362
-
-
Sharma, D.1
Ramanathan, K.2
-
6
-
-
0017983691
-
Negative dynamic resistance in MOS devices
-
vol. 378
-
D. Sharma, J. Gautier, and G. Merckel, “Negative dynamic resistance in MOS devices,” IEEE J. Solid-State Circuits, vol. SC-13, vol. 378, 1978.
-
(1978)
IEEE J. Solid-State Circuits
, vol.SC-13
-
-
Sharma, D.1
Gautier, J.2
Merckel, G.3
-
7
-
-
0016880889
-
pMOSFET parameters at cryogenic temperatures
-
R. Maddox, “pMOSFET parameters at cryogenic temperatures,” IEEE Trans. Electron Devices, vol. ED-23, p. 16, 1976.
-
(1976)
IEEE Trans. Electron Devices
, vol.ED-23
, pp. 16
-
-
Maddox, R.1
-
8
-
-
0001543250
-
MOSTs at cryogenic temperatures
-
C. Rogers, “MOSTs at cryogenic temperatures,” Solid-State Electron., vol. 11, p. 1079, 1968.
-
(1968)
Solid-State Electron.
, vol.11
, pp. 1079
-
-
Rogers, C.1
-
9
-
-
0016125124
-
MOSFETs in the OK approximation
-
S. Wu and R. Anderson, “MOSFETs in the OK approximation,” Solid-State Electron., vol. 17, p. 1125, 1974.
-
(1974)
Solid-State Electron.
, vol.17
, pp. 1125
-
-
Wu, S.1
Anderson, R.2
-
10
-
-
0642371820
-
The thermal conductivity of germanium and solicon between 2 and 300K
-
J. Carruthers, T. Geballe, H. Rosenburg, and J. Ziman, “The thermal conductivity of germanium and solicon between 2 and 300K,” Proc, Roy. Soc. London, vol. A238, p. 502, 1957.
-
(1957)
Proc, Roy. Soc. London
, vol.238 A
, pp. 502
-
-
Carruthers, J.1
Geballe, T.2
Rosenburg, H.3
Ziman, J.4
-
11
-
-
36149005932
-
Thermal conductivity of silicon and germanium from 3K to the melting point
-
C. Glassbrenner and G. Slack, “Thermal conductivity of silicon and germanium from 3K to the melting point,” Phvs. Rev., vol. 134, p. A1058, 1964.
-
(1964)
Phvs. Rev.
, vol.134
, pp. A1058
-
-
Glassbrenner, C.1
Slack, G.2
-
12
-
-
0000370588
-
Thermal conductivity of silicon, germanium, III-V compounds and III-V alloys
-
P. Maycock, “Thermal conductivity of silicon, germanium, III-V compounds and III-V alloys,” Solid-Stale Electron., vol. 10, p. 161, 1967.
-
(1967)
Solid-Stale Electron.
, vol.10
, pp. 161
-
-
Maycock, P.1
-
13
-
-
0042730701
-
Semiconductors at cryogenic temperatures.
-
A. Jonscher, “Semiconductors at cryogenic temperatures.” Proc.IEEE, vol. 52, p. 1092, 1964.
-
(1964)
Proc.IEEE
, vol.52
, pp. 1092
-
-
Jonscher, A.1
-
14
-
-
0022985577
-
Low temperature CMOS devices and technology
-
J. Plummer, “Low temperature CMOS devices and technology,” inIEDM Tech. Dig., 1986, pp. 378-381.
-
(1986)
IEDM Tech. Dig.
, pp. 378-381
-
-
Plummer, J.1
-
15
-
-
0022062176
-
Behavior of CMOS inverters at cyrogenic temperatures
-
J. Laramee, M. Aubin, and D. Cheeke, “Behavior of CMOS inverters at cyrogenic temperatures,” Solid-State Electron., vol. 28, p. 453, 1985.
-
(1985)
Solid-State Electron.
, vol.28
, pp. 453
-
-
Laramee, J.1
Aubin, M.2
Cheeke, D.3
-
16
-
-
24244454588
-
Detection of heat pulses by the two-dimensional electron gas in a silicon device
-
A. Kent et al., “Detection of heat pulses by the two-dimensional electron gas in a silicon device,” Phys. Rev. Lett., vol. 61, p. 180, 1988.
-
(1988)
Phys. Rev. Lett.
, vol.61
, pp. 180
-
-
Kent, A.1
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