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Physical Review B

Volumn 29, Issue 3, 1984, Pages 1135-1147

Transient-current study of field-assisted emission from shallow levels in silicon

(3) Rosencher, E a Mosser, V a Vincent, G a,b

a ORANGE LABS (France)

b UNIVERSITÉ DE LYON (France)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 4243952738 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/PhysRevB.29.1135 Document Type: Article

Times cited : (61)

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