Nonisothermal Device Simulation Using the 2-D Numerical Process/Device Simulator TRENDY and Application to SOI-Devices

IEEE Transactions on Computer-Aided Design of Integrated Circuits and Systems

Volumn 13, Issue 3, 1994, Pages 293-302

  Krabbenborg, Benno H ^c   Mouthaan, Ton J ^c  

^a UNIVERSITY OF TWENTE   (Netherlands)

^b ETH ZURICH   (Switzerland)

^c UNIVERSITY OF TWENTE   (Netherlands)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CARRIERS; ELECTRIC PROPERTIES; HEAT TRANSFER; MATHEMATICAL MODELS; MICROELECTRONICS; MOSFET DEVICES; RELAXATION PROCESSES; SEMICONDUCTOR DEVICE MODELS; SILICON ON INSULATOR TECHNOLOGY; THERMAL EFFECTS; ULSI CIRCUITS; VLSI CIRCUITS;

ELECTRON SATURATION VELOCITY; ELECTROSTATIC DISCHARGE EVENTS; NONISOTHERMAL DEVICE SIMULATION; TEMPERATURE DEPENDENCE; TWO DIMENSIONAL NUMERICAL PROCESS/DEVICE SIMULATOR TRENDY;

SEMICONDUCTOR DEVICES;

EID: 0028401042     PISSN: 02780070     EISSN: 19374151     Source Type: Journal    
DOI: 10.1109/43.265671     Document Type: Article

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