Oxygen-related defect centers in 4H silicon carbide

Materials Science Forum

Volumn 264-268, Issue PART 1, 1998, Pages 553-556

  Dalibor, T ^a   Pensl, G ^a   Yamamoto, T ^b   Kimoto, T ^b   Matsunami, H ^b   Sridhara, S G ^c   Nizhner, D G ^c   Devaty, R P ^c   Choyke, W J ^c  

^a UNIVERSITY OF ERLANGEN NUREMBERG   (Germany)

^b KYOTO UNIVERSITY   (Japan)

^c UNIVERSITY OF PITTSBURGH   (United States)

Author keywords

Admittance Spectroscopy; Deep Level Transient Spectroscopy; Deep Oxygen Related Centers; Low Temperature Photoluminescence; Oxygen Implantation; Shallow Oxygen Related Centers

Indexed keywords

CRYSTAL DEFECTS; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC PROPERTIES; ION IMPLANTATION; OPTICAL PROPERTIES; OXYGEN; PHOTOLUMINESCENCE; SEMICONDUCTING SILICON COMPOUNDS;

ADMITTANCE SPECTROSCOPY;

SILICON CARBIDE;

EID: 0031702284     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.264-268.553     Document Type: Article

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