Optical admittance studies of vanadium donor level in high-resistivity p-type 6H-SiC

Journal of Applied Physics

Volumn 79, Issue 1, 1996, Pages 253-258

  Evwaraye, A O ^a   Smith, S R ^a,b   Mitchel, W C ^a  

^a AIR FORCE RESEARCH LABORATORY   (United States)

^b UNIVERSITY OF DAYTON RESEARCH INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC RESISTANCE; ELECTRON TRANSITIONS; ELECTRONS; ENERGY GAP; KINETIC THEORY; PHOTODIODES; PHOTOIONIZATION; RELAXATION PROCESSES; SPECTROSCOPIC ANALYSIS; THERMAL EFFECTS; VANADIUM;

BARRIER HEIGHT; DECAY KINETICS; LATTICE RELAXATION; OPTICAL ADMITTANCE SPECTROSCOPY; PERSISTENT PHOTOCONDUCTANCE; PHOTOEXCITATIONS;

SILICON CARBIDE;

EID: 0029770343     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.360938     Document Type: Article

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