Current transient in polyimide-passivated InP/InGaAs heterojunction bipolar transistors: Systematic experiments and physical model

IEEE Transactions on Electron Devices

Volumn 47, Issue 12, 2000, Pages 2261-2269

  Wang, Hong ^a   Ng, Geok Ing ^a  

^a NANYANG TECHNOLOGICAL UNIVERSITY   (Singapore)

Author keywords

Charge carrier process; HBT; Indium phosphide; Passivation; Polymide

Indexed keywords

EID: 0001573644     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.887006     Document Type: Article

References (23)

1. Y. K. Chen et al, "Subpicosecond InP/InGaAs heterojunction bipolar transistors," IEEE Electron Device Lett., vol. 10, pp. 267-269, 1989.
2. A. Gutierrez-Aitken et al, "69 GHz frequency divider with a cantilevered base InP DHBT," in IEDM Tech. Dig., 1999.
3. max new self-alignment InP/InGaAs HBT's with a highly Be-doped base layer grown by ALE/MOCVD," IEEE Electron Device Lett., vol. 16, pp. 55-57, 1995.
4. E. Tokumitsu, A. G. Dental, and C. H. Joyner, "Reduction of the surface recombination current in InGaAs/InP pseudo-heterojunction bipolar transistors using a thin InP passivation layer," IEEE Electron Device Lett., vol. 10, pp. 585-587, 1989.
5. D. Sachelarie, J. L. Pelouard, and J. L. Benchimol, "Orientation effect on Si3N4 passivated InP/InGaAs heterojunction bipolar transistors," in P roc. 8th Int. Conf. Indium Phosphide and Related Materials, 1996, pp. 149-151.
6. A. Ouacha, M. Willander, B. Hammarlund, and R. A. Logan, "Effect of surface passivation with SiN on the electrical properties of InP/InGaAs heterojunction bipolar transistors," J. Appl. Phys., vol. 74, pp. 5602-5605, 1993.
7. D. Caffin et al., "Passivation of InP-based HBT's for high bit rate circuit applications," in Proc. Int. Conf. Indium Phosphide and Related Materials, 1997, pp. 637-640.
8. S.-I. Tanaka, K. Kashahara, H. Shimawaki, and K. Honjo, "Stress current behavior of InAlAs/InGaAs and AlGaAs/GaAs HBT's with polyimide passivation," IEEE Electron Device Lett., vol. 13, pp. 560-562, 1992.
9. S. Hyunchol, C. Gaessler, and H. Leier, "Reduction of base-collector capacitance in InP/InGaAs HBT's using a novel double polyimide planarization process," IEEE Electron Device Lett., vol. 19, pp. 297-299, 1998.
10. T. B. Hook, "Polyimide-related design considerations in bipolar technology," IEEE Trans. Electron Devices, vol. 37, pp. 1714-1718, 1990.
11. E. Itoh and M. Iwamoto, "Electronic density of state in metal/polyimide Langmuir-Blodgett film interface and its temperature dependence," J. Appl. Phys., vol. 81, pp. 1790-1797, 1997.
12. S. P. McAlist, W. R. Mckinnon, R. Driad, and A. P. Renaud, "Use of dipole doping to suppress switching in indium phosphide double heterojunction bipolar transistors," J. Appl. Phys., vol. 82, pp. 5231-5234, 1997.
13. T. Wang, N.-K. Zous, J.-L. Lai, and C. Huang, "Hot hole stress induced leakage current (SILC) transient in tunnel oxide," IEEE Electron Device Lett., vol. 19, pp. 411-113, 1998.
14. R. S. Scott and D. J. Dumin, "The charging and discharging of high-voltage stress-generated traps in thin silicon oxide," IEEE Trans. Electron Devices, vol. 43, pp. 130-136, 1996.
15. T. Wang, T. E. Chang, L. P. Chiang, and C. Huang, "A new technique to extract oxide trap time constants in MOSFET's," IEEE Electron Device Lett., vol. 17, pp. 398-400, 1996.
16. E. Itoh and M. Iwamoto, "Electronic density of state at metal/polyimide Langmuir-Blodgett film interface," Appl. Phys. Lett., vol. 68, pp. 2714-2716, 1996.
17. S. L. Rosier et al., "Charge separation for bipolar transistors," IEEE Trans. Nucl. Sci.., vol. 40, pp. 1276-1285, 1993.
18. A. Neugroschel, C.-T. Sah, M. S. Carroll, and K. G. Pfaff, "Base current relaxation transient in reverse emitter-base bias stressed silicon bipolar junction transistors," IEEE Trans. Electron Devices, vol. 44, pp. 792-800, 1997.
19. C. D. Parikh and F. A. Lindholm, "Space-charge region recombination in heterojunction bipolar transistors," IEEE Trans. Electron Devices, vol. 39, pp. 2197-2205, 1992.
20. E. Itoh, Y. Niwa, and M. Iwamoto, "Temperature and photoirradiation dependence of electrostatic phenomena at metal/polyimide LB film interface," in Proc. Int. Symp. Electrical Insulating Materials, 1995, pp. 339-342.
21. I. Lundsorm and C. Svensson, "Tunneling to traps in insulator," J. Appl. Phys., vol. 43, pp. 5045-5047, 1972.
22. S. M. Sze, Semiconductor Device: Physics and Technology. New York: Wiley, 1985.
23. N. R. Tu and K. C. Kao, "High-field electrical conduction in polyimide films," J. Appl. Phys., vol. 85, pp. 7267-7275, 1999.