Orientation effect on Si3N4 passivated InP/InGaAs heterojunction bipolar transistors

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1996, Pages 149-151

  Sachelarie, D ^a   Pelouard, J L ^a   Benchimol, J L ^a  

^a ICCE   (Romania)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; PASSIVATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH; SILICON COMPOUNDS;

EMITTER BASE REVERSE CHARACTERISTICS; EMITTER ORIENTATION EFFECTS;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029712623     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (7)