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Journal of Applied Physics

Volumn 74, Issue 9, 1993, Pages 5602-5605

Effect of surface passivation with SiN on the electrical properties of InP/InGaAs heterojunction bipolar transistors

(4) Ouacha, A a Willander, M a Hammarlund, B a Logan, R A b

a LINKÖPING UNIVERSITY (Sweden)

b LUCENT TECHNOLOGIES (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 33646218702 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.354221 Document Type: Article

Times cited : (36)

References (24)

1
- 84916433682
- (1986) IEEE Electron Device Lett , vol.EDL-7 , pp. 613
- Nottenburg, R.N.¹ Temkin, H.² Panish, M.B.³ Bhat, R.⁴ Bischoff, J.C.⁵

2
- 2342482247
- (1986) Appl. Phys. Lett , vol.49 , pp. 1112
- Nottenburg, R.N.¹ Temkin, H.² Panish, M.B.³ Hamm, R.A.⁴

3
- 0023455921
- (1987) Electron. Lett , vol.23 , pp. 1298
- Hayes, J.R.¹ Bhat, R.² Schumacher, H.³ Kosa, M.⁴

4
- 0023362618
- (1987) IEEE Electron Device Lett , vol.EDL-8 , pp. 282
- Nottenburg, R.N.¹ Bischoff, J.C.² Panish, M.B.³ Temkin, H.⁴

5
- 0025405298
- (1990) Electron. Lett , vol.26 , pp. 392
- Ohishi, T.¹ Abe, Y.² Sugimoto, H.³ Ohtsuka, K.⁴ Matsui, T.⁵

6
- 0026895923
- (1992) Solid-State Electron , vol.35 , pp. 937
- Pitz, G.¹ Hartnagel, H.L.² Mause, K.³ Fiedler, F.⁴ Briggmann, D.⁵

7
- 0024681332
- (1989) IEEE Electron Device Lett , vol.EDL-10 , pp. 267
- Chen, Y.K.¹ Nottenburg, R.N.² Panish, M.B.³ Hamm, R.A.⁴ Humphrey, D.A.⁵

8
- 0025791117
- (1991) Electron. Lett , vol.27 , pp. 40
- Knoyo, C.S.¹ Gerrard, N.D.² Pinzone, C.J.³ Maziar, C.M.⁴ Depuis, R.D.⁵

9
- 0018515889
- (1979) IEEE Trans. Electron Devices , vol.ED-26 , pp. 1361
- Birrittella, M.S.¹ Neugroschel, A.² Lindholm, F.A.³

10
- 0022050488
- (1985) Jpn. J. Appl. Phys , vol.24 , pp. L241
- Ito, H.¹ Ishibashi, T.² Sugets, T.³

11
- 0006700649
- (1988) J. Appl. Phys , vol.63 , pp. 809
- Ramberd, L.P.¹ Ishibashi, T.²

12
- 0026954042
- (1992) IEEE Trans. Electron Devices , vol.ED-39 , pp. 2658
- Lundstrom, M.¹ Dodd, P.E.² Lovejoy, M.L.³ Harmon, E.S.⁴ Melloch, M.R.⁵ Keyes, B.M.⁶ Hamm, R.A.⁷ Ritter, R.⁸

13
- 0345585350
- (1981) J. Cryst. Growth , vol.54 , pp. 127
- Pearsall, T.P.¹ Hirtz, J.P.²

14
- 0023040636
- (1986) Appl. Phys. Lett , vol.48 , pp. 367
- Chand, N.¹ Fischer, R.² Hendersson, T.³ Morkoç, H.⁴ Neugroschel, A.⁵

15
- 0024749881
- (1989) Solid-State Electron , vol.32 , pp. 853
- Elshabini-Riad, A.¹ He, J.²

16
- 84936530775
- (1973) J. Phys. Chem. Solids , vol.34 , pp. 2436
- Foxon, C.T.¹ Harvey, J.A.² Joyce, B.A.³

17
- 0017417085
- (1977) Solid-State Electron , vol.20 , pp. 27
- Guha, S.¹ Hasegawa, F.²

18
- 0020165314
- (1982) Thin Solid Films , vol.94 , pp. 161
- Oberstar, J.D.¹ Streetman, B.G.²

19
- 84950600978
- Interface Constraints on MESFET and MISFET
- Chap. 5 in, (N. G. Einsbruch, New York)
- (1985) VLSI Electronics , vol.10 , pp. 174-226
- Wieder, H.H.¹

20
- 0003479975
- edited by C. W. Wilmsen (Plenum, New York)
- (1985) Physics and Chemistry of III-V Compound Semiconductor Interface

21
- 0003680984
- edited by L. I. Maissel and R. Glang (McGraw-Hill, New York)
- (1970) Handbook of Thin Film Technology

22
- 0020159599
- (1982) J. Vac. Sci. Technol , vol.21 , pp. 655
- Meiners, L.G.¹

23
- 0021405387
- (1984) J. Appl. Phys , vol.55 , pp. 3109
- Pande, K.P.¹ Nair, V.K.R.²

24
- 0022013790
- (1985) Appl. Phys. Lett , vol.46 , pp. 416
- Pande, K.P.¹ Gutierrez, D.²

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