Reduction of the Surface Recombination Current in InGaAs/InP Pseudo-Heterojunction Bipolar Transistors Using a Thin InP Passivation Layer

IEEE Electron Device Letters

Volumn 10, Issue 12, 1989, Pages 585-587

  Tokumitsu, E ^a   Dentai, Andrew G ^a   Joyner, C H ^a  

^a LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; SEMICONDUCTING INDIUM COMPOUNDS;

INDIUM PHOSPHIDE; PASSIVATION LAYERS; SURFACE RECOMBINATION CURRENTS;

TRANSISTORS, BIPOLAR;

EID: 0024910851     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.43148     Document Type: Article

References (14)

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