Ultrahigh fT and fmax New Self-Alignment InP/InGaAs HWT's with a Highly Be-doped Base Layer Grown by ALE/MOCVD

IEEE Electron Device Letters

Volumn 16, Issue 2, 1995, Pages 55-57

  Shigematsu, H ^a   Iwai, T ^a   Matsumiya, Y ^a   Ohnishi, H ^a   Ueda, O ^a   Fujii, T ^a  

^a FUJITSU LABORATORIES LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CARRIER CONCENTRATION; ELECTRIC RESISTANCE; EPITAXIAL GROWTH; GATES (TRANSISTOR); METALLORGANIC CHEMICAL VAPOR DEPOSITION; PERFORMANCE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR DOPING;

BASE COLLECTOR CAPACITANCE; BASE DOPING CONCENTRATION; BASE RESISTANCE; EMITTER; SELF ALIGNMENT;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0029250794     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.386029     Document Type: Article

References (8)

1. Y. K. Chen, R. N. Nottenburg, M. B. Panish, R. A. Hamm, and D. A. Humphrey, “Subpicosecond InP/InGaAs heterojunction bipolar transistors,” IEEE Electron Device Lett., vol. 10, pp. 267–269, 1989.
2. A. Feygenson, R. K. Montgomery, P. R. Smith, R. A. Hamm, M. Haner, R. D. Yadvish, and M. B. Panish, “InP/GaInAs composite collector heterostructure bipolar transistors and circuits,” Proc. InP and Related Mat., pp. 572–575, 1993.
3. J. I. Song, W. P. Hong, C. J. Palmstrom, B. P. Van der Gaag, and K. B. Chough, “A fT = 175 GHz carbon-doped base InP/InGaAs HBT,” Proc. IEDM, pp. 787-790. 1993.
4. H. F. Chau and Y. C. Kao, “High fmax InAlAs/InGaAs heterojunction bipolar transistors,” Proc. IEDM, pp. 783–786, 1993.
5. Y. Matsuoka, H. Nakajima, K. Kurishima, T. Kobayashi, M. Yoneyama, and E. Sano, “Novel InP/InGaAs double-heterojunction bipolar transistors suitable for high-speed IC's and OEIC's,” Proc. 6th Int. Conf. on InP and Related Materials, pp. 555–558, 1994.
6. H. Shigematsu, H. Yamada, Y. Matsumiya, Y. Sakuma, H. Ohnishi, O. Ueda, T. Fujii, K. Nakajima, and N. Yokoyama, “ALE/MOCVD-grown InP/InGaAs HBTs with a highly doped base layer and suppressed diffusion,” Proc. GaAs and Related Compounds, pp.153-158, 1993.
7. S. A. Mass and D. Tait, “Parameter-extraction method for heterojunction bipolar transistors,” IEEE Microwave and Guided Wave Lett., vol. 2, pp. 502–504, 1992.
8. D. R. Pehlke and D. Pavlidis, “Evaluation of the factors determining HBT high frequency performance by direct analysis of S-parameter data,” IEEE Microwave Theory Tech., vol. 40, pp. 2367–2373, 1992.