Polyimide-Related Design Considerations in a Bipolar Technology

IEEE Transactions on Electron Devices

Volumn 37, Issue 7, 1990, Pages 1714-1718

  Hook, Terence B ^a  

^a IBM   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS; POLYIMIDES;

BIPOLAR INTEGRATED CIRCUITS; EMITTER-BASE JUNCTION; INTERLEVEL DIELECTRIC; N-P-N DEVICE;

TRANSISTORS, BIPOLAR;

EID: 0025464793     PISSN: 00189383     EISSN: 15579646     Source Type: Journal    
DOI: 10.1109/16.55759     Document Type: Article

References (10)

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7. H. J. Neuhaus, D. R. Day, and S. D. Senturia, “Sodium transport in polyimide-SiO2 systems,” J. Electron. Mat., vol. 14, pp. 379–404, 1985.
8. D. R. Day, T. J. Lewis, H. L. Lee, and S. D. Senturia, “The role of boundary layer capacitance at blocking electrodes in the interpretation of dielectric cure data in adhesives,” J. Adhesion, vol. 18, pp. 73–90, 1985.
9. L. Rothman, “Properties of thin polyimide films,” J. Electrochem. Soc, vol. 127, pp. 2216–2220, 1980.
10. T. B. Hook, M. E. Johnson, and A. V. Ferris-Prabhu, “Electron trapping, nitride conduction, and forward gain instability in a lateral p-n-p device,” IEEE Trans. Electron Devices, vol. 37, pp. 755–761, Mar. 1990.