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Volumn 10, Issue 6, 1989, Pages 267-269

Subpicosecond InP/InGaAs Heterostructure Bipolar Transistors

Author keywords

[No Author keywords available]

Indexed keywords

INTEGRATED CIRCUITS, DIGITAL; MICROWAVE MEASUREMENTS; OSCILLATORS; TRANSISTORS--MILLIMETER WAVES;

EID: 0024681332     PISSN: 07413106     EISSN: 15580563     Source Type: Journal    
DOI: 10.1109/55.31742     Document Type: Article
Times cited : (151)

References (10)
  • 1
    • 0020125545 scopus 로고
    • A comparison of semiconductor devices for high-speed logic
    • P. M. Solomon, “A comparison of semiconductor devices for high-speed logic,” Proc. IEEE, vol. 70, pp. 489–509, 1982.
    • (1982) Proc. IEEE , vol.70 , pp. 489-509
    • Solomon, P.M.1
  • 2
    • 0019918412 scopus 로고
    • Heterostructure bipolar transistors and integrated circuits
    • H. Kroemer, “Heterostructure bipolar transistors and integrated circuits,” Proc. IEEE, vol. 70, pp. 13–25, 1982.
    • (1982) Proc. IEEE , vol.70 , pp. 13-25
    • Kroemer, H.1
  • 3
    • 0002848531 scopus 로고
    • Non-equilibrium electron transport in bipolar devices
    • A. F. J. Levi and Y. Yafet, “Non-equilibrium electron transport in bipolar devices,” Appl. Phys. Lett., vol. 51, pp. 42–44, 1987.
    • (1987) Appl. Phys. Lett. , vol.51 , pp. 42-44
    • Levi, A.F.J.1    Yafet, Y.2
  • 8
    • 0021479281 scopus 로고
    • GaAs/ (Ga, Al)As heterojunction bipolar transistors with buried oxygen-implanted isolation layers
    • P. M. Asbeck, D. L. Miller, R. J. Anderson, and F. H. Eisen, “GaAs/ (Ga,Al)As heterojunction bipolar transistors with buried oxygen-implanted isolation layers,” IEEE Electron Device Lett., vol. EDL-5, pp. 310–312, 1984.
    • (1984) IEEE Electron Device Lett. , vol.EDL-5 , pp. 310-312
    • Asbeck, P.M.1    Miller, D.L.2    Anderson, R.J.3    Eisen, F.H.4
  • 9
    • 0005383576 scopus 로고
    • The method of estimating delay in switching circuits and the figure of merit of a switching transistor
    • K. G. Ashar, “The method of estimating delay in switching circuits and the figure of merit of a switching transistor,” IEEE Trans. Electron Devices, vol. ED-11, pp. 497–506, 1964.
    • (1964) IEEE Trans. Electron Devices , vol.ED-11 , pp. 497-506
    • Ashar, K.G.1
  • 10
    • 0015491379 scopus 로고
    • GaAs-GaAlAs heterojunction transistor for high frequency operation
    • W. P. Dumke, J. M. Woodall, and V. L. Rideout, “GaAs-GaAlAs heterojunction transistor for high frequency operation,” Solid-State Electron., vol. 15, pp. 1339–1343, 1972.
    • (1972) Solid-State Electron. , vol.15 , pp. 1339-1343
    • Dumke, W.P.1    Woodall, J.M.2    Rideout, V.L.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.