Reduction of base-collector capacitance in InP/InGaAs HBT's using a novel double polyimide planarization process

IEEE Electron Device Letters

Volumn 19, Issue 8, 1998, Pages 297-299

  Shin, Hyunchol ^a,b   Gaessler, Christoph ^b   Leier, Helmut ^b  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b DAIMLER AG   (Germany)

Author keywords

Base collector capacitance; InP InGaAs HBT

Indexed keywords

CAPACITANCE; ELECTRIC VARIABLES CONTROL; ETCHING; PLASTIC COATINGS; POLYIMIDES; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES;

PARASITIC BASE COLLECTOR CAPACITANCE;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0032137603     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/55.704405     Document Type: Article

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