Proposal for an etching mechanism of InP in CH4-H2 mixtures based on plasma diagnostics and surface analysis

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1552-1559

  Feurprier, Y ^a   Cardinaud, Ch ^a   Grolleau, B ^a   Turban, G ^a  

^a UNIVERSITÉ DE NANTES   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ETCHING; III-V SEMICONDUCTORS; INDIUM PHOSPHIDE; IONS; MASS SPECTROMETRY; OPTICAL EMISSION SPECTROSCOPY; PLASMA DIAGNOSTICS; SEMICONDUCTING INDIUM PHOSPHIDE; SURFACE ANALYSIS;

ETCHING MECHANISM; IMPORTANT FEATURES; MIXTURE COMPOSITIONS; QUANTITATIVE DETERMINATIONS; REMOVAL MECHANISM; SITU X-RAY PHOTOELECTRON SPECTROSCOPY; SURFACE COVERAGES; SURFACE STOICHIOMETRY;

X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0001010575     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581186     Document Type: Article

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