A theoretical investigation of migration potentials of Ga adatoms near kink and step edges on GaAs(001)-(2 × 4) surface

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 35, Issue 8 PART A, 1996, Pages

  Ito, Tomonori ^a   Shiraishi, Kenji ^b  

^a NTT CORPORATION   (Japan)

^b NTT Basic Research Laboratories   (Japan)

Author keywords

(2 4) 2 Surface; Electron counting model; Empirical interatomic potential; Ga adatom; GaAs(001); Kink; Migration potential; Step

Indexed keywords

ADSORPTION; ATOMS; CALCULATIONS; CHEMICAL BONDS; COMPUTATIONAL METHODS; CRYSTAL LATTICES; ELECTRON ENERGY LEVELS; FUNCTIONS; MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM; SURFACE PHENOMENA;

EMPIRICAL INTERATOMIC POTENTIAL; KINK EDGES; MIGRATION POTENTIALS; STEP EDGES;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0030216282     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.l949     Document Type: Article

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