SCOPUS 정보 검색 플랫폼

Computational Materials Science

Volumn 6, Issue 2, 1996, Pages 158-172

Review of atomistic simulations of surface diffusion and growth on semiconductors

(1) Kaxiras, Efthimios a

a HARVARD UNIVERSITY (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; COMPUTER SIMULATION; DIFFUSION; QUANTUM THEORY; SCANNING TUNNELING MICROSCOPY; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SUBSTRATES; SURFACE PROPERTIES; SURFACES;

ATOMISTIC SIMULATIONS; CLASSICAL INTERATOMIC POTENTIALS; SURFACE DIFFUSION; SURFACE RECONSTRUCTION;

ATOMS;

EID: 0030218605 PISSN: 09270256 EISSN: None Source Type: Journal
DOI: 10.1016/0927-0256(96)00030-4 Document Type: Review

Times cited : (26)

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