Simulations of ZnSe/GaAs heteroepitaxial growth

Journal of Crystal Growth

Volumn 178, Issue 3, 1997, Pages 258-267

  Grein, C H ^a   Faurie, J P ^a,b   Bousquet, V ^b   Tournie E ^b   Benedek, R ^c   De La Rubia, T ^d  

^a UNIVERSITY OF ILLINOIS AT CHICAGO   (United States)

^b CNRS Sophia Antipolis   (France)

^c ARGONNE NATIONAL LABORATORY   (United States)

^d LAWRENCE LIVERMORE NATIONAL LABORATORY   (United States)

Author keywords

Computer simulation; Epitaxial growth

Indexed keywords

COMPUTER SIMULATION; EPITAXIAL GROWTH; MOLECULAR DYNAMICS; MONTE CARLO METHODS; NUCLEATION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING ZINC COMPOUNDS;

ADATOMS; ZINC SELENIDE;

SEMICONDUCTOR GROWTH;

EID: 0031187412     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(96)01193-1     Document Type: Article

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