Depth-resolved and excitation power dependent cathodoluminescence study of GaN films grown by metalorganic chemical vapor deposition

Applied Physics Letters

Volumn 70, Issue 4, 1997, Pages 438-440

  Li, X ^a   Coleman, J J ^a  

^a UNIVERSITY OF ILLINOIS AT URBANA CHAMPAIGN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 3943096921     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118174     Document Type: Article

References (14)

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14. For example, we have reported before that electron beam can cause an annealing effect which enhances the CL intensity, not only for Mg-Doped GaN but also for undoped GaN films at high beam current. The enhancement for the undoped samples is much smaller than Mg-doped samples [see X. Li, S. G. Gu, E. E. Reuter, S. G. Bishop, and J. J. Coleman, J. Appl. Phys. 80, 2687 (1996)].