Reduction of secondary defects in 50 keV P+-implanted Si(100) by MeV Si ion irradiation

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 108, Issue 1-2, 1996, Pages 81-84

  Zhao, Qing Tai ^a   Wang, Zhong Lie ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0040061838     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/0168-583X(95)00935-3     Document Type: Article

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