Enhanced diffusion of dopants in vacancy supersaturation produced by MeV implantation

Materials Research Society Symposium - Proceedings

Volumn 469, Issue , 1997, Pages 303-308

  Venezia, V C ^a   Haynes, T E ^a   Agarwal, A ^a   Gossmann, H J ^a   Eaglesham, D J ^a  

^a OAK RIDGE NATIONAL LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIFFUSION IN SOLIDS; ION IMPLANTATION; SEMICONDUCTOR DOPING; SUBSTRATES; SUPERSATURATION;

BONDED ETCH BACK SILICON ON INSULATOR (BESOI); FLOAT ZONE SILICON; TRANSIENT ENHANCED DIFFUSION;

SILICON ON INSULATOR TECHNOLOGY;

EID: 0031359273     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1557/proc-469-303     Document Type: Conference Paper

References (12)