Modification of GaN Schottky barrier interfaces probed by ballistic-electron-emission microscopy and spectroscopy

Applied Physics Letters

Volumn 76, Issue 13, 2000, Pages 1725-1727

  Bell, L D ^a   Smith, R P ^a,c   McDermott, B T ^b   Gertner, E R ^b   Pittman, R ^b   Pierson, R L ^b   Sullivan, G J ^b  

^a CALIFORNIA INSTITUTE OF TECHNOLOGY   (United States)

^b ROCKWELL SCIENCE CENTER   (United States)

^c Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001040355     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126148     Document Type: Article

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