XPS investigation with factor analysis for the study of Ge clustering in SiO2

Surface and Interface Analysis

Volumn 29, Issue 4, 2000, Pages 249-254

  Oswald, S ^a   Schmidt, B ^b   Heinig, K H ^b  

^a IFW DRESDEN   (Germany)

^b INSTITUTE OF ION BEAM PHYSICS AND MATERIALS RESEARCH   (Germany)

Author keywords

Cluster formation; Depth profiling; Factor analysis; Ge; Nanocrystals; XPS

Indexed keywords

EID: 0000534494     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/(SICI)1096-9918(200004)29:4<249::AID-SIA735>3.0.CO;2-5     Document Type: Article

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