The origin of photoluminescence in Ge-implanted SiO2 layers

Journal of Luminescence

Volumn 80, Issue 1-4, 1998, Pages 281-284

  Kim, H B ^a   Chae, K H ^a   Whang, C N ^a   Jeong, J Y ^a   Oh, M S ^a   Im, S ^a   Song, J H ^b  

^a Yonsei University   (South Korea)

^b Korea Institute of Science and Technology   (South Korea)

Author keywords

Ge; Implantation; Quantum confinement; Radiative defect; SiO2

Indexed keywords

EID: 0346305032     PISSN: 00222313     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-2313(98)00112-4     Document Type: Article

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