Single-electron transistor fabricated by focused laser beam-induced doping of a GaAs/AlGaAs heterostructure

Applied Physics Letters

Volumn 70, Issue 16, 1997, Pages 2135-2137

  Baumgartner, P ^a   Wegscheider, W ^a   Bichler, M ^a   Schedelbeck, G ^a   Neumann, R ^a   Abstreiter, G ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0009971448     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.118969     Document Type: Article

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