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M. J. Yoo, T. A. Fulton, H. F. Hess, R. L. Willett, L. N. Dunkleberger, R. J. Chichester, L. N. Pfeiffer, and K. W. West, Science 276, 579 (1997).
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Chichester, R.J.6
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5
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85033303410
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note
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In the case of low-dimensional electron systems, the electron concentration might be affected depending on the arrangement: For instance, a gate electrode on top of a 2DES causes a depletion effect on the 2DES when changing the electrostatic potential difference between both. But this is exactly what is happening when changing the contact voltage between the gate and the 2DES by magnetic field.
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6
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0028396696
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This effect has also to be considered in the transport spectroscopy of quantum dot systems: J. Weis, R. Haug, K. v. Klitzing, and K. Ploog, Surf. Sci. 305, 664 (1994).
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8
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0000176279
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D. B. Haviland, L. S. Kuzmin, P. Delsing, K. K. Likharev, and T. Claeson, Z. Phys. B 85, 339 (1991).
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Likharev, K.K.4
Claeson, T.5
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9
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0001918954
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L. Ji, P. D. Dresselhaus, Siyuan Man, K. Lin, W. Zheng, and J. E. Lukens, J. Vac. Sci. Technol. B 12, 3619 (1994).
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Ji, L.1
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Man, S.3
Lin, K.4
Zheng, W.5
Lukens, J.E.6
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10
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85033309528
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note
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To contact the sample, wires have to go from room temperature to low temperature into the magnetic field. Therefore, the same wire material is used.
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12
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35949019893
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R. T. Zeller, F. F. Fang, B. B. Goldberg, S. L. Wright, and P. J. Stiles, Phys. Rev. B 33, 1529 (1986); D. Weiss, V. Mosser, V. Gundmundsson, R. R. Gerhardts, and K. v. Klitzing, Solid State Commun. 62, 89 (1987).
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Phys. Rev. B
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Zeller, R.T.1
Fang, F.F.2
Goldberg, B.B.3
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Stiles, P.J.5
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13
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0023326072
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R. T. Zeller, F. F. Fang, B. B. Goldberg, S. L. Wright, and P. J. Stiles, Phys. Rev. B 33, 1529 (1986); D. Weiss, V. Mosser, V. Gundmundsson, R. R. Gerhardts, and K. v. Klitzing, Solid State Commun. 62, 89 (1987).
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Weiss, D.1
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14
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4243308676
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See, for example: V. T. Dolgopolov, A. A. Shashkin, A. V. Aristov, D. Schmerek, W. Hansen, J. P. Kotthaus, and M. Holland, Phys. Rev. Lett. 79, 729 (1997).
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Hansen, W.5
Kotthaus, J.P.6
Holland, M.7
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