Coulomb Blockade Observed in InAs/AlGaSb Nanostructures Produced by an Atomic Force Microscope Oxidation Process

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 38, Issue 1 B, 1999, Pages 480-482

  Sasa, Shigehiko ^a   Ikeda, Takatoshi ^a   Anjiki, Kazutomo ^a   Inoue, Masataka ^a  

^a OSAKA INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

AFM; Coulomb blockade; In plane gate; InAs AlGaSb; Oxidation; Single electron transistor

Indexed keywords

ATOMIC FORCE MICROSCOPY; CAPACITANCE; CURRENT VOLTAGE CHARACTERISTICS; ELECTRODES; ELECTRON TUNNELING; HETEROJUNCTIONS; OXIDATION; QUANTUM THEORY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE;

ATOMIC FORCE MICROSCOPE (AFM) OXIDATION PROCESSES; COULOMB BLOCKADE; SINGLE ELECTRON TRANSISTORS (SET);

TRANSISTORS;

EID: 0032606796     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.38.480     Document Type: Article

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