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Surface Science

Volumn 405, Issue 2-3, 1998, Pages

A model for size evolution of pyramidal Ge islands on Si(001) during annealing

(2) Kamins, T I a Williams, R Stanley a

a HEWLETT PACKARD LABORATORIES (United States)

Author keywords

Chemical vapor deposition; Clusters; Germanium; Models of surface kinetics; Self assembly; Semiconductor semiconductor interfaces; Surface diffusion

Indexed keywords

ANNEALING; ATOMS; CHEMICAL VAPOR DEPOSITION; DIFFUSION; MOLECULAR DYNAMICS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SURFACE STRUCTURE;

CLUSTERS; SELF ASSEMBLY; SURFACE DIFFUSION;

INTERFACES (MATERIALS);

EID: 0032070805 PISSN: 00396028 EISSN: None Source Type: Journal
DOI: 10.1016/S0039-6028(98)00174-5 Document Type: Article

Times cited : (21)

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