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Volumn 405, Issue 2-3, 1998, Pages
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A model for size evolution of pyramidal Ge islands on Si(001) during annealing
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Author keywords
Chemical vapor deposition; Clusters; Germanium; Models of surface kinetics; Self assembly; Semiconductor semiconductor interfaces; Surface diffusion
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Indexed keywords
ANNEALING;
ATOMS;
CHEMICAL VAPOR DEPOSITION;
DIFFUSION;
MOLECULAR DYNAMICS;
SEMICONDUCTING GERMANIUM;
SEMICONDUCTING SILICON;
SURFACE STRUCTURE;
CLUSTERS;
SELF ASSEMBLY;
SURFACE DIFFUSION;
INTERFACES (MATERIALS);
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EID: 0032070805
PISSN: 00396028
EISSN: None
Source Type: Journal
DOI: 10.1016/S0039-6028(98)00174-5 Document Type: Article |
Times cited : (22)
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References (20)
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