메뉴 건너뛰기




Volumn 405, Issue 2-3, 1998, Pages

A model for size evolution of pyramidal Ge islands on Si(001) during annealing

Author keywords

Chemical vapor deposition; Clusters; Germanium; Models of surface kinetics; Self assembly; Semiconductor semiconductor interfaces; Surface diffusion

Indexed keywords

ANNEALING; ATOMS; CHEMICAL VAPOR DEPOSITION; DIFFUSION; MOLECULAR DYNAMICS; SEMICONDUCTING GERMANIUM; SEMICONDUCTING SILICON; SURFACE STRUCTURE;

EID: 0032070805     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0039-6028(98)00174-5     Document Type: Article
Times cited : (22)

References (20)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.