Luminescence centers in high-energy ion-implanted silicon

Materials Science Forum

Volumn 258-263, Issue PART 1, 1997, Pages 587-592

  Terashima, Koichi ^a   Ikarashi, Taeko ^a   Watanabe, Masahito ^a   Kitano, Tomohisa ^a  

^a NEC CORPORATION   (Japan)

Author keywords

Cu contamination; Ion implantation; Photoluminescence; Point defect; Silicon

Indexed keywords

ANNEALING; CONTAMINATION; COPPER; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; PHOSPHORUS; PHOTOLUMINESCENCE; POINT DEFECTS; SEMICONDUCTING BORON; VACUUM APPLICATIONS;

LUMINESCENCE CENTERS;

SEMICONDUCTING SILICON;

EID: 0031337512     PISSN: 02555476     EISSN: 16629752     Source Type: Book Series    
DOI: 10.4028/www.scientific.net/msf.258-263.587     Document Type: Article

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