Ab initio calculations of the reconstructed (100) surfaces of cubic silicon carbide

Applied Surface Science

Volumn 104-105, Issue , 1996, Pages 45-48

  Käckell, Peter ^a   Furthmüller, Jürgen ^a   Bechstedt, Friedhelm ^a  

^a FRIEDRICH SCHILLER UNIVERSITY JENA   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

CALCULATIONS; COMPUTER SOFTWARE; CRYSTAL STRUCTURE; ELECTRIC FIELD EFFECTS; ELECTRONIC DENSITY OF STATES; SURFACE STRUCTURE;

SILICON CARBIDE;

EID: 0030233546     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(96)00118-3     Document Type: Article

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