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Volumn 5, Issue 1, 1998, Pages 207-211

Scanning tunneling microscopy study of single domain β-SiC(100) surfaces: Growth and morphology

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EID: 0040629167     PISSN: 0218625X     EISSN: None     Source Type: Journal    
DOI: 10.1142/s0218625x98000384     Document Type: Article
Times cited : (1)

References (22)
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    • ed. G. Harris, EMIS Datareview series, INSPEC (London)
    • R. Kaplan and V. M. Bermudez, in Properties of Silicon Carbide, ed. G. Harris, EMIS Datareview series, INSPEC (London), 13, 101 (1995).
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    • Kaplan, R.1    Bermudez, V.M.2
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    • Thèse de Doctorat (PhD), Université de Paris-Sud/Orsay
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    • Semond, F.1
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    • M. Sabisch, P. Krüger and J. Pollmann, Phys. Rev. B51, 13367 (1995); M. Sabisch, P. Krüger, A. Mazur, M. Rohlfing and J. Pollmann, ibid. B53, 13121 (1996); J. Pollmann, P. Krüger, M. Rohlfing, M. Sabisch and D. Vogel, Appl. Surf. Sci. 104-105, 1 (1996).
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    • Sabisch, M.1    Krüger, P.2    Pollmann, J.3
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    • M. Sabisch, P. Krüger and J. Pollmann, Phys. Rev. B51, 13367 (1995); M. Sabisch, P. Krüger, A. Mazur, M. Rohlfing and J. Pollmann, ibid. B53, 13121 (1996); J. Pollmann, P. Krüger, M. Rohlfing, M. Sabisch and D. Vogel, Appl. Surf. Sci. 104-105, 1 (1996).
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    • M. Sabisch, P. Krüger and J. Pollmann, Phys. Rev. B51, 13367 (1995); M. Sabisch, P. Krüger, A. Mazur, M. Rohlfing and J. Pollmann, ibid. B53, 13121 (1996); J. Pollmann, P. Krüger, M. Rohlfing, M. Sabisch and D. Vogel, Appl. Surf. Sci. 104-105, 1 (1996).
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.