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Volumn 84, Issue 8, 1998, Pages 4332-4342

The formation of ohmic and Schottky enhanced contacts to III-V compound semiconductors via the exchange mechanism: A combined thermodynamic and kinetic model

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0001122026     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.368653     Document Type: Article
Times cited : (5)

References (42)
  • 24
    • 11644317422 scopus 로고
    • Ph.D. thesis, University of Wisconsin-Madison
    • C.-H. Jan, Ph.D. thesis, University of Wisconsin-Madison, 1991.
    • (1991)
    • Jan, C.-H.1
  • 27
    • 85034289868 scopus 로고    scopus 로고
    • U.S. Patent Number 5,516,725 (May 14, 1996)
    • Y. A. Chang, C.-H. Jan, and C.-P. Chen, U.S. Patent Number 5,516,725 (May 14, 1996).
    • Chang, Y.A.1    Jan, C.-H.2    Chen, C.-P.3
  • 39
    • 11644282006 scopus 로고
    • Ph.D. thesis, University of Wisconsin-Madison, Madison, WI
    • S. E. Mohney, Ph.D. thesis, University of Wisconsin-Madison, Madison, WI, 1994.
    • (1994)
    • Mohney, S.E.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.