Schottky enhancement of contacts to n-GaAs via the exchange mechanism using NiAlxGa1_x as a metallization

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 17, Issue 2, 1999, Pages 432-442

  Chen, C P ^a  

^a WINBOND ELECTRONICS CORPORATION   (Taiwan)

Author keywords

[No Author keywords available]

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EID: 22644451210     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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