High reflectivity Te-doped GaAsSb/AlAsSb Bragg mirror for 1.5μm surface emitting lasers

Electronics Letters

Volumn 33, Issue 2, 1997, Pages 140-142

  Genty, F ^a,c   Almuneau, G ^a   Chusseau, L ^a   Boissier, G ^a   Malzac, J P ^b   Salet, P ^c   Jacquet, J ^c  

^a UNIVERSITÉ MONTPELLIER II   (France)

^b UNIVERSITÉ MONTPELLIER 2   (France)

^c NOKIA RESEARCH CENTER   (United States)

Author keywords

Distributed Bragg reflector lasers; Surface emitting lasers

Indexed keywords

LIGHT ABSORPTION; MIRRORS; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTING TELLURIUM; SEMICONDUCTOR DOPING;

DISTRIBUTED BRAGG REFLECTOR LASERS; SURFACE EMITTING LASERS;

SEMICONDUCTOR LASERS;

EID: 0030826026     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:19970112     Document Type: Article

References (6)

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2. HARMAND, J.C., JEANNÈS, F., LE ROUX, G., and JUHEL, M.: 'AlAsSb/ AlGaAsSb Bragg stacks for 1.55μm wavelength grown by molecular beam epitaxy', Electron. Lett., 1995, 31, pp. 1689-1690
3. BENNETT, B.R., SOREF, R.A., and DEL ALAMO, J.A.: 'Carrier-induced change in refractive index of InP, GaAs and InGaAsP', IEEE J. Quantum Electron., 1990, 26, pp. 113-122
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