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Journal of Crystal Growth

Volumn 272, Issue 1-4 SPEC. ISS., 2004, Pages 15-23

The role of the surface adsorption layer during MOVPE growth analyzed by the flow modulation method

(4) Nakano, Takayuki a,c Sugiyama, Masakazu a,c Nakano, Yoshiaki b,c Shimogaki, Yukihiro a,c

a UNIVERSITY OF TOKYO (Japan)

b UNIVERSITY OF TOKYO (Japan)

c JAPAN SCIENCE AND TECHNOLOGY AGENCY (Japan)

Author keywords

A1. Growth models; A1. Segregation; A1. Surface processes; A3. Metalorganic vapor phase epitaxy; B2. Semiconducting III V materials

Indexed keywords

ADSORPTION; CRYSTAL GROWTH; METALLORGANIC VAPOR PHASE EPITAXY; MOLECULAR BEAM EPITAXY; SEGREGATION (METALLOGRAPHY); SEMICONDUCTOR QUANTUM WELLS; THICK FILMS;

GAS PHASE; GROWTH MODELS; SEMICONDUCTING III-V MATERIALS; SURFACE PROCESSES;

INDIUM;

EID: 9944229023 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2004.08.119 Document Type: Conference Paper

Times cited : (8)

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