X-ray CTR scattering measurement of InP/InGaAs/InP interface structures fabricated by different growth processes

Applied Surface Science

Volumn 159, Issue , 2000, Pages 250-255

  Tabuchi, M ^a   Takahashi, R ^a   Araki, M ^a   Hirayama, K ^a   Futakuchi, N ^b   Shimogaki, Y ^b   Nakano, Y ^b   Takeda, Y ^a  

^a NAGOYA UNIVERSITY   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DESORPTION; METALLORGANIC VAPOR PHASE EPITAXY; MONOLAYERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

HETEROINTERFACES; X RAY CRYSTAL TRUNCATION ROD (CTR);

HETEROJUNCTIONS;

EID: 0034205907     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(00)00041-6     Document Type: Article

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