Kinetic ellipsometry measurement of InGaP/GaAs hetero-interface formation in MOVPE

Journal of Crystal Growth

Volumn 221, Issue 1-4, 2000, Pages 136-141

  Nakano, T ^a   Nakano, Y ^a   Shimogaki, Y ^a  

^a UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DESORPTION; ELLIPSOMETRY; INTERFACES (MATERIALS); METALLORGANIC VAPOR PHASE EPITAXY; MONOLAYERS; PHOSPHORUS; PHOTOLUMINESCENCE; REACTION KINETICS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

HETERO-INTERFACE FORMATIONS; KINETIC ELLIPSOMETRY;

HETEROJUNCTIONS;

EID: 0034504710     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(00)00673-4     Document Type: Article

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