Nitrogen interface engineering in Al 2O 3 capacitors for improved thermal stability

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 5, 2004, Pages 2462-2466

  Kirsch, P D ^a,d   Park, D G ^a   Chan, K K ^b   D'Emic, C ^b   Bruley, J ^c   Jammy, R ^b  

^a IBM MICROELECTRONICS   (United States)

^b IBM T J WATSON RESEARCH CENTER   (United States)

^c IBM   (United States)

^d SEMATECH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC INTERFACES; DYNAMIC RANDOM ACCESS MEMORY (DRAM); INTERFACE ENGINEERING; ULTRAHIGH VACUUM CHEMICAL VAPOR DEPOSITION (UHVCVD);

ALUMINUM COMPOUNDS; CAPACITORS; CHEMICAL VAPOR DEPOSITION; DYNAMIC RANDOM ACCESS STORAGE; ELECTRON ENERGY LOSS SPECTROSCOPY; LEAKAGE CURRENTS; OXIDATION; THERMAL STRESS; THERMODYNAMIC STABILITY; TRANSMISSION ELECTRON MICROSCOPY;

NITROGEN;

EID: 9744282684     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1792241     Document Type: Article

References (18)

1. J. H. Stathis and D. J. DiMaria, Tech. Dig. - Int. Electron Devices Meet. 1998, 167 (1998).
2. E. P. Gusev, E. Cartier, D. A. Buchanan, M. Gribelyuk, M. Copel, H. Okorn-Schmidt, and C. D. D'Emic, Microelectron. Eng. 59, 341 (2001).
3. L. Manchanda, M. D. Morris, M. L. Green, R. B. v. Dover, F. Klemens, T. W. Sorsch, P. J. Silverman, G. Wilk, B. Busch, and S. Aravamudhan, Microelectron. Eng. 59, 351 (2001).
4. G. D. Wilk and R. M. Wallace, Appl. Phys. Lett. 74, 2854 (1999).
5. J.-H. Lee, Y.-S. Kim, H.-S. Jung, J.-H. Lee, N.-I. Lee, H.-K. Kang, J.-H. Ku, H. S. Kang, Y.-K. Kim, K.-H. Cho, and K.-P. Sudh, Symp. VLSI Tech. Dig. 84 (2002).
6. U. Gruening et al., Tech. Dig. - Int. Electron Devices Meet. 1999, 25 (1999).
7. M. Gutsche, Tech. Dig. - Int. Electron Devices Meet. 2001, 411 (2001).
8. H. Akatsu et al., Symp. VLSI Tech. Dig. 52 (2002).
9. R. Choi, C. S. Kang, B. H. Lee, K. Onishi, R. Nieh, S. Gopalan, E. Dharmarajan, and J. C. Lee, Tech. Dig. - Int. Electron Devices Meet. 2001, 15 (2001).
10. D.-G. Park, K.-Y. Lim, H.-J. Cho, J.-J. Kim, J.-M. Yang, J.-K. Ko, I.-S. Yeo, J. W. Park, H. d. Waard, and M. Tuominen, J. Appl. Phys. 91, 65 (2002).
11. J. K. Schaeffer et al., J. Vac. Sci. Technol. B 21, 11 (2003).
12. H.-J. Cho, D.-G. Park, K.-Y. Lim, J.-K. Ko, I.-S. Yeo, J. W. Park, and J. -S. Roh, Appl. Phys. Lett. 80, 3177 (2002).
13. K. Chan and M. Copel (private communication).
14. S. Ezhilvalavan and T.-Y. Tseng, J. Appl. Phys. 83, 4797 (1998).
15. M. A. Quevedo-Lopez, M. El-Bouanani, M. J. Kim, B. E. Gnade, R. M. Wallace, M. R. Visokay, A. LiFatou, M. J. Bevan, and L. Columbo, Appl. Phys. Lett. 81, 1609 (2002).
16. C. Lee, J. Choi, M. Cho, J. Park, C. S. Hwang, H. J. Kim, J. Jeong, and W. Lee, Appl. Phys. Lett. 83, 1403 (2003).
17. S. J. Doh, Tech. Dig. - Int. Electron Devices Meet. 2003, 943 (2003).
18. A. Kamath, B. Y. Kim, P. M. Blass, Y. M. Sun, J. M. White, and D. L. Kwong, Mater. Res. Soc. Symp. Proc. 477, 335 (1997).