A new CMOS pixel structure for low-dark-current and large-array-size still imager applications

IEEE Transactions on Circuits and Systems I: Regular Papers

Volumn 51, Issue 11, 2004, Pages 2204-2214

  Shih, Yu Chuan ^a   Wu, Chung Yu ^a  

^a Institute of Electronics   (Taiwan)

Author keywords

CMOS images; Dark current; Pseudoactive pixel sensor (PAPS); Readout circuit

Indexed keywords

ELECTRIC CURRENTS; IMAGE SENSORS; INTEGRATED CIRCUIT TESTING; LEAKAGE CURRENTS; PHOTODIODES; READOUT SYSTEMS; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR JUNCTIONS; SIGNAL TO NOISE RATIO;

CMOS IMAGES; CMOS PIXEL STRUCTURE; DARK CURRENT; PSEUDOACTIVE PIXEL SENSOR (PAPS); READOUT CIRCUIT;

CMOS INTEGRATED CIRCUITS;

EID: 9744275347     PISSN: 10577122     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCSI.2004.835684     Document Type: Article

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