-
1
-
-
0028392939
-
CMOS active pixel image sensor
-
Mar
-
S. Mendis, S. Kemeny, and E. Fossum, "CMOS active pixel image sensor," IEEE Trans. Electron Devices, vol. 41, pp. 452-453, Mar. 1994.
-
(1994)
IEEE Trans. Electron Devices
, vol.41
, pp. 452-453
-
-
Mendis, S.1
Kemeny, S.2
Fossum, E.3
-
3
-
-
0032307850
-
A 200-mW 3.3-V CMOS color camera IC producing 352 × 288 24-b video at 30 frames/s
-
Dec
-
M. J. Loinaz, K. J. Singh, A. J. Blanksby, D. A. Inglis, K. Azadet, and B. D. Ackland, "A 200-mW 3.3-V CMOS color camera IC producing 352 × 288 24-b video at 30 frames/s," IEEE J. Solid-State Circuits, vol. 33, pp. 2092-2103. Dec. 1998.
-
(1998)
IEEE J. Solid-State Circuits
, vol.33
, pp. 2092-2103
-
-
Loinaz, M.J.1
Singh, K.J.2
Blanksby, A.J.3
Inglis, D.A.4
Azadet, K.5
Ackland, B.D.6
-
4
-
-
0034430388
-
A 1.2-V micropower CMOS active pixel image sensor for portable applications
-
Feb
-
K.-B. Cho, A. Krymski, and E. R. Fossum, "A 1.2-V micropower CMOS active pixel image sensor for portable applications," in ISSCC Dig., Feb. 2000, pp. 114-115.
-
(2000)
ISSCC Dig.
, pp. 114-115
-
-
Cho, K.-B.1
Krymski, A.2
Fossum, E.R.3
-
5
-
-
0031246971
-
Random addressable 2048 × 2048 active pixel image sensor
-
Oct
-
D. Scheffer, B. Dierickx, and G. Meynants, "Random addressable 2048 × 2048 active pixel image sensor," IEEE Trans. Electron Devices, vol. 44. pp. 1716-1720, Oct. 1997.
-
(1997)
IEEE Trans. Electron Devices
, vol.44
, pp. 1716-1720
-
-
Scheffer, D.1
Dierickx, B.2
Meynants, G.3
-
6
-
-
0034429726
-
A 1/3-inch 1.3-M pixel single-layer electrode CCD with a high-frame-rate skip mode
-
Feb
-
K. Hatano, M. Furumiya, I. Murakami, T. Kawasaki, C. Ogawa, and Y. Nakashiba, "A 1/3-inch 1.3-M pixel single-layer electrode CCD with a high-frame-rate skip mode," in ISSCC Dig., Feb. 2000, pp. 112-113.
-
(2000)
ISSCC Dig.
, pp. 112-113
-
-
Hatano, K.1
Furumiya, M.2
Murakami, I.3
Kawasaki, T.4
Ogawa, C.5
Nakashiba, Y.6
-
7
-
-
0031071639
-
A 1/4-inch 330-k square pixel progressive scan CMOS active pixel image sensor
-
Feb
-
E. Oba, K. Mabuchi, Y. Iida, N. Nakamura, and H. Miura, "A 1/4-inch 330-k square pixel progressive scan CMOS active pixel image sensor," in ISSCC Dig., Feb. 1997, pp. 180-181.
-
(1997)
ISSCC Dig.
, pp. 180-181
-
-
Oba, E.1
Mabuchi, K.2
Iida, Y.3
Nakamura, N.4
Miura, H.5
-
8
-
-
0031702319
-
2 square pixel CMOS image sensor for digital still camera application
-
Feb
-
2 square pixel CMOS image sensor for digital still camera application," in ISSCC Dig., Feb. 1998, pp. 182-183.
-
(1998)
ISSCC Dig.
, pp. 182-183
-
-
Ihara, H.1
Yamashita, H.2
Inoue, I.3
Yamaguchi, T.4
Nakamura, N.5
Nozaki, H.6
-
9
-
-
0030685435
-
A high resolution CMOS imager with active pixel using capacitively coupled bipolar operation
-
June
-
M. Chi, T. Delbruck, N. Mascarenhas, A. Bergemont, and C. Mead, "A high resolution CMOS imager with active pixel using capacitively coupled bipolar operation," in Proc. Int. Symp. VLSI Technology, Systems and Applications. June 1997. pp. 58-61.
-
(1997)
Proc. Int. Symp. VLSI Technology, Systems and Applications
, pp. 58-61
-
-
Chi, M.1
Delbruck, T.2
Mascarenhas, N.3
Bergemont, A.4
Mead, C.5
-
10
-
-
0033701991
-
Single-capacitor-single-contact active pixel sensor
-
May
-
R. Etienne-Cummings, "Single-capacitor-single-contact active pixel sensor," in Proc. ISCAS, May 2000. pp. 177-180.
-
(2000)
Proc. ISCAS
, pp. 177-180
-
-
Etienne-Cummings, R.1
-
11
-
-
0003076608
-
Operation of p-n junction photodetectors in a photon flux integration mode
-
G. P. Weckler, "Operation of p-n junction photodetectors in a photon flux integration mode," IEEE J. Solid-State Circuits, vol. SC-2, pp. 65-73, 1967.
-
(1967)
IEEE J. Solid-State Circuits
, vol.SC-2
, pp. 65-73
-
-
Weckler, G.P.1
-
13
-
-
0025595741
-
ASIC vision
-
D. Renshaw, P. G. Denyer, G. Wang, and M. Lu, "ASIC vision," in IEEE Custom Integrated Circuits Conf., 1990, pp. 7.3.1-7.3.4.
-
(1990)
IEEE Custom Integrated Circuits Conf.
, pp. 731-734
-
-
Renshaw, D.1
Denyer, P.G.2
Wang, G.3
Lu, M.4
-
14
-
-
0032224741
-
A memory read-out approach for a 0.5-μm CMOS image sensor
-
W. Hoekstra, A. van der Avoird, M. Kole, G. Schrooten, and C. J. Schaeffer, "A memory read-out approach for a 0.5-μm CMOS image sensor," in SPIE Int. Soc. Opt. Eng. Proc., vol. 3301, 1998, pp. 151-7.
-
(1998)
SPIE Int. Soc. Opt. Eng. Proc.
, vol.3301
, pp. 151-157
-
-
Hoekstra, W.1
Van Der Avoird, A.2
Kole, M.3
Schrooten, G.4
Schaeffer, C.J.5
-
15
-
-
27844476978
-
MOS area sensor: Part II - Low-noise MOS area sensor with antiblooming photodiodes
-
Aug
-
S. Ohba, M. Nakai, H. Ando, S. Hanamura, S. Shimada, K. Satoh, K. Takahashi, M. Kubo, and T. Fujita, "MOS area sensor: Part II - Low-noise MOS area sensor with antiblooming photodiodes," IEEE Trans. Electron Devices, vol. ED-27. Aug. 1980.
-
(1980)
IEEE Trans. Electron Devices
, vol.ED-27
-
-
Ohba, S.1
Nakai, M.2
Ando, H.3
Hanamura, S.4
Shimada, S.5
Satoh, K.6
Takahashi, K.7
Kubo, M.8
Fujita, T.9
-
16
-
-
0022435506
-
Design consideration and performance of a new MOS imaging device
-
Aug
-
H. Ando, S. Ohba, M. Nakai, T. Ozaki, N. Ozawa, K. Ikeda, T. Masuhara, T. Imaide, I. Takemoto, T. Suzuki, and T. Fujita, "Design consideration and performance of a new MOS imaging device," IEEE Trans. Electron Devices, vol. ED-32. Aug. 1985.
-
(1985)
IEEE Trans. Electron Devices
, vol.ED-32
-
-
Ando, H.1
Ohba, S.2
Nakai, M.3
Ozaki, T.4
Ozawa, N.5
Ikeda, K.6
Masuhara, T.7
Imaide, T.8
Takemoto, I.9
Suzuki, T.10
Fujita, T.11
-
17
-
-
0000385677
-
Self-scanned silicon image detector arrays
-
Apr
-
P. Noble, "Self-scanned silicon image detector arrays," IEEE Trans. Electron Devices, vol. ED-15, pp. 202-209, Apr. 1968.
-
(1968)
IEEE Trans. Electron Devices
, vol.ED-15
, pp. 202-209
-
-
Noble, P.1
-
18
-
-
0002258853
-
An addressable 256 × 256 photodiode image sensor array with an 8-bit digital output
-
C. Jansson, P. Ingelhag, C. Svensson, and R. Forchheimer, "An addressable 256 × 256 photodiode image sensor array with an 8-bit digital output," Analog Integrated Circuits and Signal Processing, vol. 4, pp. 37-49, 1993.
-
(1993)
Analog Integrated Circuits and Signal Processing
, vol.4
, pp. 37-49
-
-
Jansson, C.1
Ingelhag, P.2
Svensson, C.3
Forchheimer, R.4
-
19
-
-
0034429681
-
A 256 × 256 CMOS differential passive pixel imager with FPN reduction techniques
-
Feb
-
I. L. Fujimori, C. C. Wang, and C. G. Sodini, "A 256 × 256 CMOS differential passive pixel imager with FPN reduction techniques," in ISSCC Dig., Feb. 2000. pp. 106-107.
-
(2000)
ISSCC Dig.
, pp. 106-107
-
-
Fujimori, I.L.1
Wang, C.C.2
Sodini, C.G.3
-
20
-
-
0003088406
-
Characterization of CMOS photodiodes for imager application
-
C. C. Wang, I. L. Fujimori, and C. G. Sodini, "Characterization of CMOS photodiodes for imager application," in IEEE Workshop CCD and AIS Proc., 1999, pp. 76-9.
-
(1999)
IEEE Workshop CCD and AIS Proc.
, pp. 76-79
-
-
Wang, C.C.1
Fujimori, I.L.2
Sodini, C.G.3
-
21
-
-
0030378204
-
Technology and device scaling considerations for CMOS imagers
-
Dec
-
H.-S. Wong, "Technology and device scaling considerations for CMOS imagers," IEEE Trans. Electron Devices, vol. 43, pp. 2131-2142, Dec. 1996.
-
(1996)
IEEE Trans. Electron Devices
, vol.43
, pp. 2131-2142
-
-
Wong, H.-S.1
-
22
-
-
0031249402
-
CMOS image sensors: Electronic camera-on-a-chip
-
Oct
-
E. R. Fossum, "CMOS image sensors: Electronic camera-on-a-chip," IEEE Trans. Electron Devices, vol. 44, Oct. 1997.
-
(1997)
IEEE Trans. Electron Devices
, vol.44
-
-
Fossum, E.R.1
-
23
-
-
0032403331
-
Comparison of passive and active pixel schemes for CMOS visible imagers
-
Apr
-
L. J. Kozlowski, J. Luo, W. E. Kleinhans, and T. Liu, "Comparison of passive and active pixel schemes for CMOS visible imagers," in SPIE Conf. Infrared Readout Electronics, vol. 3360, Apr. 1998. pp. 101-110.
-
(1998)
SPIE Conf. Infrared Readout Electronics
, vol.3360
, pp. 101-110
-
-
Kozlowski, L.J.1
Luo, J.2
Kleinhans, W.E.3
Liu, T.4
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