Device transfer technology by backside etching (DTBE) for poly-Si thin-film transistors on glass/plastic substrate

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 42, Issue 9 AB, 2003, Pages

  Wang, Shuo Cheng ^a   Yeh, Ching Fa ^a   Huang, Chien Kai ^a   Dai, Yuan Tung ^b  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

^b INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

CMP; Glass substrate; Plastic substrate; Poly Si; Thin film transistor; Wet etching

Indexed keywords

CHEMICAL MECHANICAL POLISHING; ELECTRIC PROPERTIES; ETCHING; GLASS; LOW TEMPERATURE OPERATIONS; MELTING; PLASTICS; POLYSILICON; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; SUBSTRATES;

DEVICE TRANSFER BY BACKSIDE ETCHING; GLASS SUBSTRATE; PLASTIC SUBSTRATE; POLY-SILICON THIN-FILM TRANSISTORS; WET CHEMICAL ETCHING;

THIN FILM TRANSISTORS;

EID: 0344494110     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.l1044     Document Type: Letter

References (12)

1. C. E. Forbes, A. Gelbman and C. Turner: SID Dig. (2002) p. 1200.
2. T. Serikawa and F. Omata: IEEE Trans. Electron Devices 49 (2002) 820.
3. D. P. Gosain, T. Noguchi and S. Usui: Jpn. J. Appl. Phys. 39 (2000) L179.
4. S. D. Theiss, P. G. Carey, P. M. Smith, P. Wickboldt, T. W. Sigmon, Y. J. Tung and T. J. King: IEDM'98 Tech. Dig. (1998) p. 257.
5. D. H. Choi, E. Sadayuki, O. Sugiura and M. Matsumura: Jpn. J. Appl. Phys. 33 (1994) 70.
6. R. T. Fulks, J. Ho and J. B. Boyce: IEEE Electron Device Lett. 22 (2001) 86.
7. SUFTLA is a trademark.
8. T. Shimoda and S. Inoue: IEDM'99 Tech. Dig. (1999) p. 289.
9. A. Asano and T. Kinoshita: SID Dig. (2002) p. 1196.
10. C. F. Yeh, S. S. Lin, T. Z. Yang, C. L. Chen and Y. C. Yang: IEEE Trans. Electron Devices 41 (1994) 173.
11. M. Wong, Z. Jin, G. A. Bhat, P. C. Wong and H. S. Kwok: IEEE Trans. Electron Devices 47 (2000) 1061.
12. H. Wang, M. Chan, S. Jagar, V. M. C. Poon, M. Qin, Y. Wang and P. K. Ko: IEEE Trans. Electron Devices 47 (2000) 1580.