Polarization-Engineered III-Nitride Heterojunction Tunnel Field-Effect Transistors

IEEE Journal on Exploratory Solid-State Computational Devices and Circuits

Volumn 1, Issue , 2015, Pages 28-34

  Li, Wenjun ^a   Sharmin, Saima ^b   Ilatikhameneh, Hesameddin ^b   Rahman, Rajib ^b   Lu, Yeqing ^c   Wang, Jingshan ^a   Yan, Xiaodong ^a   Seabaugh, Alan ^a   Klimeck, Gerhard ^b   Jena, Debdeep ^a   Fay, Patrick ^a  

^a University of Notre Dame   (United States)

^b PURDUE UNIVERSITY   (United States)

^c SYNOPSYS INC   (United States)

Author keywords

III nitride heterojunction; InN; polarization engineering; tunnel field effect transistors (TFETs)

Indexed keywords

GALLIUM NITRIDE; HETEROJUNCTIONS; III-V SEMICONDUCTORS; NITRIDES; POLARIZATION; TUNNEL FIELD EFFECT TRANSISTORS;

ACCEPTOR LEVELS; DEVICE CHARACTERISTICS; ENERGY DELAY PRODUCT; III-NITRIDE; INTERBAND TUNNELING; PROTOTYPE DEVICES; TUNNEL FIELDEFFECT TRANSISTOR (TFETS); TUNNELING FIELD-EFFECT TRANSISTORS;

TUNNELS;

ELECTRICAL ENGINEERING; POLARIZATION; TRANSISTORS;

EID: 85071067586     PISSN: None     EISSN: 23299231     Source Type: Journal    
DOI: 10.1109/JXCDC.2015.2426433     Document Type: Article

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