-
1
-
-
84890813807
-
-
International Technology Roadmap for Semiconductors
-
International Technology Roadmap for Semiconductors (2012). http://www.itrs.net
-
(2012)
-
-
-
2
-
-
84862776787
-
A single-atom transistor
-
10.1038/nnano.2012.21
-
Fuechsle, M.; Miwa, J.A.; Mahapatra, S.; Ryu, H.; Lee, S.; Warschkow, O.; Hollenberg, L.C.L.; Klimeck, G.; Simmons, M.Y.: A single-atom transistor. Nat. Nanotechnol. 7(4), 242-246 (2012)
-
(2012)
Nat. Nanotechnol.
, vol.7
, Issue.4
, pp. 242-246
-
-
Fuechsle, M.1
Miwa, J.A.2
Mahapatra, S.3
Ryu, H.4
Lee, S.5
Warschkow, O.6
Hollenberg, L.C.L.7
Klimeck, G.8
Simmons, M.Y.9
-
3
-
-
81255146379
-
Nemo5: A parallel multiscale nanoelectronics modeling tool
-
10.1109/TNANO.2011.2166164 844JA Cited
-
Steiger, S.; Povolotskyi, M.; Park, H.H.; Kubis, T.; Klimeck, G.: Nemo5: a parallel multiscale nanoelectronics modeling tool. IEEE Trans. Nanotechnol. 10(6), 1464-1474 (2011). 844JA Cited
-
(2011)
IEEE Trans. Nanotechnol.
, vol.10
, Issue.6
, pp. 1464-1474
-
-
Steiger, S.1
Povolotskyi, M.2
Park, H.H.3
Kubis, T.4
Klimeck, G.5
-
4
-
-
84890851125
-
Nemo5, a parallel, multiscale, multiphysics nanoelectronics modeling tool
-
Sellier, J.; Fonseca, J.; Kubis, T.C.; Povolotskyi, M.; He, Y.; Ilatikhameneh, H.; Jiang, Z.; Kim, S.; Mejia, D.; Sengupta, P.; Tan, Y.: Nemo5, a parallel, multiscale, multiphysics nanoelectronics modeling tool. In: SISPAD (2012)
-
(2012)
SISPAD
-
-
Sellier, J.1
Fonseca, J.2
Kubis, T.C.3
Povolotskyi, M.4
He, Y.5
Ilatikhameneh, H.6
Jiang, Z.7
Kim, S.8
Mejia, D.9
Sengupta, P.10
Tan, Y.11
-
6
-
-
80052401866
-
Distributed non-equilibrium Green's function algorithms for the simulation of nanoelectronic devices with scattering
-
043713 10.1063/1.3624612
-
Cauley, S.; Luisier, M.; Balakrishnan, V.; Klimeck, G.; Koh, C.-K.: Distributed non-equilibrium Green's function algorithms for the simulation of nanoelectronic devices with scattering. J. Appl. Phys. 110(4), 043713 (2011)
-
(2011)
J. Appl. Phys.
, vol.110
, Issue.4
-
-
Cauley, S.1
Luisier, M.2
Balakrishnan, V.3
Klimeck, G.4
Koh, C.-K.5
-
7
-
-
84879362977
-
Low rank approximation method for efficient green's function calculation of dissipative quantum transport
-
213707-8 10.1063/1.4809638
-
Zeng, L.; He, Y.; Povolotskyi, M.; Liu, X.; Klimeck, G.; Kubis, T.: Low rank approximation method for efficient green's function calculation of dissipative quantum transport. J. Appl. Phys. 113(21), 213707-8 (2013)
-
(2013)
J. Appl. Phys.
, vol.113
, Issue.21
-
-
Zeng, L.1
He, Y.2
Povolotskyi, M.3
Liu, X.4
Klimeck, G.5
Kubis, T.6
-
8
-
-
0038341883
-
Efficient method for the calculation of ballistic quantum transport
-
10.1063/1.1560567
-
Mamaluy, D.; Sabathil, M.; Vogl, P.: Efficient method for the calculation of ballistic quantum transport. J. Appl. Phys. 93(8), 4628-4633 (2003)
-
(2003)
J. Appl. Phys.
, vol.93
, Issue.8
, pp. 4628-4633
-
-
Mamaluy, D.1
Sabathil, M.2
Vogl, P.3
-
9
-
-
4344606224
-
A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation
-
10.1063/1.1769089
-
Wang, J.; Polizzi, E.; Lundstrom, M.: A three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation. J. Appl. Phys. 96(4), 2192-2203 (2004)
-
(2004)
J. Appl. Phys.
, vol.96
, Issue.4
, pp. 2192-2203
-
-
Wang, J.1
Polizzi, E.2
Lundstrom, M.3
-
10
-
-
0001634804
-
Multiband treatment of quantum transport in interband tunnel devices
-
10.1103/PhysRevB.45.3583
-
Ting, D.Z.Y.; Yu, E.T.; McGill, T.C.: Multiband treatment of quantum transport in interband tunnel devices. Phys. Rev. B 45(7), 3583-3592 (1992)
-
(1992)
Phys. Rev. B
, vol.45
, Issue.7
, pp. 3583-3592
-
-
Ting, D.Z.Y.1
Yu, E.T.2
McGill, T.C.3
-
11
-
-
84873549540
-
-
Balay, S.; Brown, J.; Buschelman, K.; Gropp, W.D.; Kaushik, D.; Knepley, M.G.; Curfman McInnes, L.; Smith, B.F.; Zhang, H.: Petsc web page (2013). http://www.mcs.anl.gov/petsc
-
(2013)
Petsc Web Page
-
-
Balay, S.1
Brown, J.2
Buschelman, K.3
Gropp, W.D.4
Kaushik, D.5
Knepley, M.G.6
Curfman McInnes, L.7
Smith, B.F.8
Zhang, H.9
-
12
-
-
0001500805
-
Iteration scheme for the solution of the two-dimensional Schrödinger-Poisson equations in quantum structures
-
10.1063/1.365396
-
Trellakis, A.; Galick, A.T.; Pacelli, A.; Ravaioli, U.: Iteration scheme for the solution of the two-dimensional Schrödinger-Poisson equations in quantum structures. J. Appl. Phys. 81(12), 7880-7884 (1997)
-
(1997)
J. Appl. Phys.
, vol.81
, Issue.12
, pp. 7880-7884
-
-
Trellakis, A.1
Galick, A.T.2
Pacelli, A.3
Ravaioli, U.4
-
13
-
-
0342723158
-
Single and multiband modeling of quantum electron transport through layered semiconductor devices
-
10.1063/1.365394
-
Lake, R.; Klimeck, G.; Bowen, R.C.; Jovanovic, D.: Single and multiband modeling of quantum electron transport through layered semiconductor devices. J. Appl. Phys. 81(12), 7845-7869 (1997)
-
(1997)
J. Appl. Phys.
, vol.81
, Issue.12
, pp. 7845-7869
-
-
Lake, R.1
Klimeck, G.2
Bowen, R.C.3
Jovanovic, D.4
-
14
-
-
84867142799
-
Sources and Development of Mathematical Software
-
W.R. Cowell (eds) Prentice Hall Englewood Cliffs 83027012 Wayne R. Cowell (ed.) and index
-
Cowell, W.R.: Sources and Development of Mathematical Software. In: Cowell, W.R. (ed.): Prentice-Hall Series in Computational Mathematics. Prentice Hall, Englewood Cliffs (1984). 83027012 Wayne R. Cowell (ed.) and index
-
(1984)
Prentice-Hall Series in Computational Mathematics
-
-
Cowell, W.R.1
-
15
-
-
33748575889
-
Continuous mosfet performance increase with device scaling: The role of strain and channel material innovations
-
10.1147/rd.504.0363
-
Antoniadis, D.A.; Aberg, I.; NiChleirigh, C.; Nayfeh, O.M.; Khakifirooz, A.; Hoyt, J.L.: Continuous mosfet performance increase with device scaling: the role of strain and channel material innovations. IBM J. Res. Dev. 50(4/5), 363-376 (2006)
-
(2006)
IBM J. Res. Dev.
, vol.50
, Issue.45
, pp. 363-376
-
-
Antoniadis, D.A.1
Aberg, I.2
Nichleirigh, C.3
Nayfeh, O.M.4
Khakifirooz, A.5
Hoyt, J.L.6
-
16
-
-
80455178786
-
Enhanced valence force field model for the lattice properties of gallium arsenide
-
155204 10.1103/PhysRevB.84.155204
-
Steiger, S.; Salmani-Jelodar, M.; Areshkin, D.; Paul, A.; Kubis, T.C.; Povolotskyi, M.; Park, H.-H.; Klimeck, G.: Enhanced valence force field model for the lattice properties of gallium arsenide. Phys. Rev. B, Solid State 84(15), 155204 (2011)
-
(2011)
Phys. Rev. B, Solid State
, vol.84
, Issue.15
-
-
Steiger, S.1
Salmani-Jelodar, M.2
Areshkin, D.3
Paul, A.4
Kubis, T.C.5
Povolotskyi, M.6
Park, H.-H.7
Klimeck, G.8
-
17
-
-
78649829958
-
Modified valence force field approach for phonon dispersion: From zinc-blende bulk to nanowires
-
10.1007/s10825-010-0332-9
-
Paul, A.; Luisier, M.; Klimeck, G.: Modified valence force field approach for phonon dispersion: from zinc-blende bulk to nanowires. J. Comput. Electron. 9(3-4), 160-172 (2010)
-
(2010)
J. Comput. Electron.
, vol.9
, Issue.3-4
, pp. 160-172
-
-
Paul, A.1
Luisier, M.2
Klimeck, G.3
-
18
-
-
0001472582
-
Effect of strain on phonons in Si, Ge, and Si/Ge heterostructures
-
10.1103/PhysRevB.48.17938
-
Sui, Z.; Herman, I.P.: Effect of strain on phonons in Si, Ge, and Si/Ge heterostructures. Phys. Rev. B, Solid State 48(24), 17938-17953 (1993)
-
(1993)
Phys. Rev. B, Solid State
, vol.48
, Issue.24
, pp. 17938-17953
-
-
Sui, Z.1
Herman, I.P.2
-
19
-
-
38049148246
-
Silicon nanowires as efficient thermoelectric materials
-
10.1038/nature06458
-
Boukai, A.I.; Bunimovich, Y.; Tahir-Kheli, J.; Yu, J.-K.; Goddard Iii, W.A.; Heath, J.R.: Silicon nanowires as efficient thermoelectric materials. Nature 451(7175), 168-171 (2008)
-
(2008)
Nature
, vol.451
, Issue.7175
, pp. 168-171
-
-
Boukai, A.I.1
Bunimovich, Y.2
Tahir-Kheli, J.3
Yu, J.-K.4
Goddard III, W.A.5
Heath, J.R.6
-
20
-
-
77950263950
-
It's time to reinvent the transistor!
-
10.1126/science.1187597
-
Theis, T.N.; Solomon, P.M.: It's time to reinvent the transistor! Science 327(5973), 1600-1601 (2010)
-
(2010)
Science
, vol.327
, Issue.5973
, pp. 1600-1601
-
-
Theis, T.N.1
Solomon, P.M.2
-
21
-
-
84869033168
-
The piezoelectronic transistor: A nanoactuator-based post-cmos digital switch with high speed and low power
-
10.1557/mrs.2012.267
-
Newns, D.M.; Elmegreen, B.G.; Liu, X.-H.; Martyna, G.J.: The piezoelectronic transistor: a nanoactuator-based post-cmos digital switch with high speed and low power. Mater. Res. Soc. Bull. 37(11), 1071-1076 (2012)
-
(2012)
Mater. Res. Soc. Bull.
, vol.37
, Issue.11
, pp. 1071-1076
-
-
Newns, D.M.1
Elmegreen, B.G.2
Liu, X.-H.3
Martyna, G.J.4
-
22
-
-
84864503948
-
High response piezoelectric and piezoresistive materials for fast, low voltage switching: Simulation and theory of transduction physics at the nanometer-scale
-
10.1002/adma.201104617
-
Newns, D.M.; Elmegreen, B.G.; Liu, X.-H.; Martyna, G.J.: High response piezoelectric and piezoresistive materials for fast, low voltage switching: simulation and theory of transduction physics at the nanometer-scale. Adv. Mater. 24(27), 3672-3677 (2012)
-
(2012)
Adv. Mater.
, vol.24
, Issue.27
, pp. 3672-3677
-
-
Newns, D.M.1
Elmegreen, B.G.2
Liu, X.-H.3
Martyna, G.J.4
-
23
-
-
36049053404
-
Metal-insulator transition
-
10.1103/RevModPhys.40.677
-
Mott, N.F.: Metal-insulator transition. Rev. Mod. Phys. 40(4), 677-683 (1968)
-
(1968)
Rev. Mod. Phys.
, vol.40
, Issue.4
, pp. 677-683
-
-
Mott, N.F.1
-
24
-
-
84874104962
-
Parameterization of tight-binding models from density functional theory calculations
-
10.1007/s10825-013-0436-0
-
Tan, Y.; Povolotskyi, M.; Kubis, T.C.; He, Y.; Jiang, Z.; Klimeck, G.; Boykin, T.: Parameterization of tight-binding models from density functional theory calculations. J. Comput. Electron. 12, 56 (2013)
-
(2013)
J. Comput. Electron.
, vol.12
, pp. 56
-
-
Tan, Y.1
Povolotskyi, M.2
Kubis, T.C.3
He, Y.4
Jiang, Z.5
Klimeck, G.6
Boykin, T.7
-
25
-
-
84877958289
-
Electron transport in nano-scaled piezoelectronic devices
-
193501-3 10.1063/1.4804601
-
Jiang, Z.; Kuroda, M.A.; Tan, Y.; Newns, D.M.; Povolotskyi, M.; Boykin, T.B.; Kubis, T.; Klimeck, G.; Martyna, G.J.: Electron transport in nano-scaled piezoelectronic devices. Appl. Phys. Lett. 102(19), 193501-3 (2013)
-
(2013)
Appl. Phys. Lett.
, vol.102
, Issue.19
-
-
Jiang, Z.1
Kuroda, M.A.2
Tan, Y.3
Newns, D.M.4
Povolotskyi, M.5
Boykin, T.B.6
Kubis, T.7
Klimeck, G.8
Martyna, G.J.9
-
26
-
-
4243943295
-
Generalized gradient approximation made simple
-
10.1103/PhysRevLett.77.3865
-
Perdew, J.P.; Burke, K.; Ernzerhof, M.: Generalized gradient approximation made simple. Phys. Rev. Lett. 77(18), 3865-3868 (1996)
-
(1996)
Phys. Rev. Lett.
, vol.77
, Issue.18
, pp. 3865-3868
-
-
Perdew, J.P.1
Burke, K.2
Ernzerhof, M.3
-
27
-
-
2442522754
-
Simplified LCAO method for the periodic potential problem
-
10.1103/PhysRev.94.1498
-
Slater, J.C.; Koster, G.F.: Simplified LCAO method for the periodic potential problem. Phys. Rev. 94, 1498-1524 (1954)
-
(1954)
Phys. Rev.
, vol.94
, pp. 1498-1524
-
-
Slater, J.C.1
Koster, G.F.2
-
28
-
-
42749104960
-
Compact expression for the angular dependence of tight-binding Hamiltonian matrix elements
-
233101 10.1103/PhysRevB.69.233101
-
Podolskiy, A.V.; Vogl, P.: Compact expression for the angular dependence of tight-binding Hamiltonian matrix elements. Phys. Rev. B 69, 233101 (2004)
-
(2004)
Phys. Rev. B
, vol.69
-
-
Podolskiy, A.V.1
Vogl, P.2
-
29
-
-
78349239882
-
Colloquium: Topological insulators
-
10.1103/RevModPhys.82.3045
-
Hasan, M.Z.; Kane, C.L.: Colloquium: topological insulators. Rev. Mod. Phys. 82, 3045-3067 (2010)
-
(2010)
Rev. Mod. Phys.
, vol.82
, pp. 3045-3067
-
-
Hasan, M.Z.1
Kane, C.L.2
-
30
-
-
34347373900
-
Topological insulators with inversion symmetry
-
045302 10.1103/PhysRevB.76.045302
-
Fu, L.; Kane, C.L.: Topological insulators with inversion symmetry. Phys. Rev. B 76, 045302 (2007)
-
(2007)
Phys. Rev. B
, vol.76
-
-
Fu, L.1
Kane, C.L.2
-
31
-
-
84882435091
-
Design principles for HgTe based topological insulator devices
-
043702 10.1063/1.4813877
-
Sengupta, P.; Kubis, T.; Tan, Y.; Povolotskyi, M.; Gerhard, K.: Design principles for HgTe based topological insulator devices. J. Appl. Phys. 114(4), 043702 (2013)
-
(2013)
J. Appl. Phys.
, vol.114
, Issue.4
-
-
Sengupta, P.1
Kubis, T.2
Tan, Y.3
Povolotskyi, M.4
Gerhard, K.5
-
32
-
-
30744434349
-
Tight-binding modeling of thermoelectric properties of bismuth telluride
-
022107 10.1063/1.2162863
-
Lee, S.; von Allmen, P.: Tight-binding modeling of thermoelectric properties of bismuth telluride. Appl. Phys. Lett. 88, 022107 (2006)
-
(2006)
Appl. Phys. Lett.
, vol.88
-
-
Lee, S.1
Von Allmen, P.2
-
33
-
-
79960638523
-
Direct measurement of the out-of-plane spin texture in the Dirac-cone surface state of a topological insulator
-
216803 10.1103/PhysRevLett.106.216803
-
Souma, S.; Kosaka, K.; Sato, T.; Komatsu, M.; Takayama, A.; Takahashi, T.; Kriener, M.; Segawa, K.; Ando, Y.: Direct measurement of the out-of-plane spin texture in the Dirac-cone surface state of a topological insulator. Phys. Rev. Lett. 106(21), 216803 (2011)
-
(2011)
Phys. Rev. Lett.
, vol.106
, Issue.21
-
-
Souma, S.1
Kosaka, K.2
Sato, T.3
Komatsu, M.4
Takayama, A.5
Takahashi, T.6
Kriener, M.7
Segawa, K.8
Ando, Y.9
-
34
-
-
68949133127
-
Full-band envelope-function approach for type-ii broken-gap superlattices
-
035304 10.1103/PhysRevB.80.035304
-
Till, A.; Vogl, P.: Full-band envelope-function approach for type-ii broken-gap superlattices. Phys. Rev. B, Solid State 80(3), 035304 (2009)
-
(2009)
Phys. Rev. B, Solid State
, vol.80
, Issue.3
-
-
Till, A.1
Vogl, P.2
-
35
-
-
33947606103
-
Approximate bandstructures of semiconductor alloys from tight-binding supercell calculations
-
036203 10.1088/0953-8984/19/3/036203
-
Boykin, T.B.; Kharche, N.; Klimeck, G.; Korkusinski, M.: Approximate bandstructures of semiconductor alloys from tight-binding supercell calculations. J. Phys. Condens. Matter 19, 036203 (2007)
-
(2007)
J. Phys. Condens. Matter
, vol.19
-
-
Boykin, T.B.1
Kharche, N.2
Klimeck, G.3
Korkusinski, M.4
-
36
-
-
84857696904
-
Extracting e versus k effective band structure from supercell calculations on alloys and impurities
-
085201 10.1103/PhysRevB.85.085201
-
Popescu, V.; Zunger, A.: Extracting E versus k effective band structure from supercell calculations on alloys and impurities. Phys. Rev. B 85(8), 085201 (2012
-
(2012)
Phys. Rev. B
, vol.85
, Issue.8
-
-
Popescu, V.1
Zunger, A.2
-
37
-
-
58149096005
-
Non-primitive rectangular cells for tight-binding electronic structure calculations
-
10.1016/j.physe.2008.09.022
-
Boykin, T.B.; Kharche, N.; Klimeck, G.: Non-primitive rectangular cells for tight-binding electronic structure calculations. Physica E, Low-Dimens. Syst. Nanostruct. 41(3), 490-494 (2009)
-
(2009)
Physica E, Low-Dimens. Syst. Nanostruct.
, vol.41
, Issue.3
, pp. 490-494
-
-
Boykin, T.B.1
Kharche, N.2
Klimeck, G.3
-
38
-
-
41749098089
-
Atomistic simulation of realistically sized nanodevices using nemo 3-d - Part i: Models and benchmarks
-
10.1109/TED.2007.902879
-
Klimeck, G.; Shahid Ahmed, S.; Bae, H.; Kharche, N.; Clark, S.; Haley, B.; Lee, S.; Naumov, M.; Ryu, H.; Saied, F.; et al.: Atomistic simulation of realistically sized nanodevices using nemo 3-d - Part i: models and benchmarks. IEEE Trans. Electron Devices 54(9), 2079-2089 (2007)
-
(2007)
IEEE Trans. Electron Devices
, vol.54
, Issue.9
, pp. 2079-2089
-
-
Klimeck, G.1
Shahid Ahmed, S.2
Bae, H.3
Kharche, N.4
Clark, S.5
Haley, B.6
Lee, S.7
Naumov, M.8
Ryu, H.9
Saied, F.10
-
39
-
-
41749112698
-
Atomistic simulation of realistically sized nanodevices using nemo 3-d - Part ii: Applications
-
10.1109/TED.2007.904877
-
Klimeck, G.; Ahmed, S.S.; Kharche, N.; Korkusinski, M.; Usman, M.; Prada, M.; Boykin, T.B.: Atomistic simulation of realistically sized nanodevices using nemo 3-d - Part ii: applications. IEEE Trans. Electron Devices 54(9), 2090-2099 (2007)
-
(2007)
IEEE Trans. Electron Devices
, vol.54
, Issue.9
, pp. 2090-2099
-
-
Klimeck, G.1
Ahmed, S.S.2
Kharche, N.3
Korkusinski, M.4
Usman, M.5
Prada, M.6
Boykin, T.B.7
-
40
-
-
33748713443
-
On visualizing crystal lattice planes
-
10.1119/1.2213633
-
Aravind, P.K.: On visualizing crystal lattice planes. Am. J. Phys. 74, 794 (2006)
-
(2006)
Am. J. Phys.
, vol.74
, pp. 794
-
-
Aravind, P.K.1
-
41
-
-
84899943256
-
Complex bandstructure of direct bandgap III-V semiconductors: Application to tunneling
-
International Society for Optics and Photonics Bellingham 10.1117/12.926964
-
Ajoy, A.: Complex bandstructure of direct bandgap III-V semiconductors: application to tunneling. In: 16th International Workshop on Physics of Semiconductor Devices, p. 854923. International Society for Optics and Photonics, Bellingham (2012)
-
(2012)
16th International Workshop on Physics of Semiconductor Devices
, pp. 854923
-
-
Ajoy, A.1
-
42
-
-
77950089372
-
Performance prediction of ultrascaled SiGe/Si core/shell electron and hole nanowire mosfets
-
10.1109/LED.2010.2040577
-
Paul, A.; Mehrotra, S.; Luisier, M.; Klimeck, G.: Performance prediction of ultrascaled SiGe/Si core/shell electron and hole nanowire mosfets. IEEE Electron Device Lett. 31(4), 278-280 (2010)
-
(2010)
IEEE Electron Device Lett.
, vol.31
, Issue.4
, pp. 278-280
-
-
Paul, A.1
Mehrotra, S.2
Luisier, M.3
Klimeck, G.4
|