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Volumn 12, Issue 4, 2013, Pages 592-600

Efficient and realistic device modeling from atomic detail to the nanoscale

Author keywords

Greens function formalism (NEGF); Nanoelectronics; NEMO; Parallel computing; Poisson; Quantum dot; Strain; Tight binding; Transport and phonons

Indexed keywords

COMPUTATIONAL APPROACH; NANOELECTRONIC DEVICES; NEMO; NOVEL DEVICE ARCHITECTURES; POISSON; QUANTUM DOT; QUANTUM TRANSPORT SIMULATIONS; TIGHT BINDING;

EID: 84890852298     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1007/s10825-013-0509-0     Document Type: Article
Times cited : (97)

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