Demonstration of MOSFET-like on-current performance in arsenide/antimonide tunnel FETs with staggered hetero-junctions for 300mV logic applications

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2011, Pages

  Mohata, D K ^a   Bijesh, R ^a   Mujumdar, S ^a   Eaton, C ^b   Engel Herbert, R ^b   Mayer, T ^a   Narayanan, V ^a   Fastenau, J M ^c   Loubychev, D ^c   Liu, A K ^c   Datta, S ^a  

^a The Pennsylvania State University   (United States)

^b PENNSYLVANIA STATE UNIVERSITY   (United States)

^c IQE INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPOUND SEMICONDUCTORS; GAAS; HIGH DRIVE CURRENT; HOMOJUNCTION; LOGIC APPLICATIONS; ON-CURRENTS; PROCESS FLOWS; STRAINED-SI; TUNNEL FET; TYPE II;

ANTIMONY COMPOUNDS; ELECTRON DEVICES; GALLIUM ARSENIDE; MESFET DEVICES; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON; TUNNEL JUNCTIONS;

SEMICONDUCTOR JUNCTIONS;

EID: 84856989430     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2011.6131665     Document Type: Conference Paper

References (6)

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