Direct vapor phase growth process and robust photoluminescence properties of large area MoS2 layers

Nano Research

Volumn 7, Issue 12, 2014, Pages 1759-1768

  Senthilkumar, V ^a   Tam, Le C ^a   Kim, Yong Soo ^a,b   Sim, Yumin ^c   Seong, Maeng Je ^c   Jang, Joon I ^b  

^a University of Ulsan   (South Korea)

^b BINGHAMTON UNIVERSITY   (United States)

^c Chung Ang University   (South Korea)

Author keywords

CVD growth; field effect ransistor (FET); large area; molybdenum disulfide; photo luminescence; Raman

Indexed keywords

EID: 85027957506     PISSN: 19980124     EISSN: 19980000     Source Type: Journal    
DOI: 10.1007/s12274-014-0535-7     Document Type: Article

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