Control of acceptor doping in MOCVD HgCdTe epilayers

Opto-Electronics Review

Volumn 18, Issue 3, 2010, Pages 271-276

  Madejczyk, P ^a   Piotrowski, A ^b   Klos K ^b   Gawron, W ^a   Rutkowski, J ^a   Rogalski, A ^a  

^a MILITARY UNIVERSITY OF TECHNOLOGY   (Poland)

^b VIGO SYSTEM S A   (Poland)

Author keywords

acceptor doping; Auger 7 mechanism; HgCdTe epilayers; MOCVD growth; TDMAAs precursor

Indexed keywords

ARSENIC; AUGERS; CADMIUM ALLOYS; CADMIUM TELLURIDE; CARRIER LIFETIME; EPILAYERS; GALLIUM ARSENIDE; II-VI SEMICONDUCTORS; III-V SEMICONDUCTORS; MERCURY COMPOUNDS; SEMICONDUCTOR ALLOYS;

ACCEPTOR DOPING; HGCDTE; HORIZONTAL REACTORS; MERCURY CADMIUM TELLURIDE; MINORITY CARRIER LIFETIMES; MOCVD GROWTH; POSTGROWTH ANNEALING; TDMAAS PRECURSOR;

MERCURY AMALGAMS;

EID: 85027956618     PISSN: 12303402     EISSN: 18963757     Source Type: Journal    
DOI: 10.2478/s11772-010-1023-x     Document Type: Article

References (19)

1. A. Rogalski, "HgCdTe infrared detector material: History, status, and outlook", Rep. Prog. Phys. 68, 2267-2336 (2005).
2. P. Madejczyk, A. Piotrowski, K. Kłos, W. Gawron, A. Rogalski, J. Rutkowski, and W. Mróz, "Surface smoothness improvement of HgCdTe layers grown by MOCVD", Bull. Pol. Acad. Sci-Te. 57, 173-180 (2009).
3. P. Madejczyk, A. Piotrowski, W. Gawron, K. Kłos, J. Pawluczyk, J. Rutkowski, J. Piotrowski, and A. Rogalski, "Growth and properties of MOCVD HgCdTe epilayers on GaAs substrate", Opto-Electron. Rev. 13, 239-251 (2005).
4. 1-xTe", Semicond. Sci. Tech. 8, S183-S196 (1993).
5. 0. 2Te epitaxial films at low temperatures", J. Appl. Phys. 65, 3080-3088 (1989).
6. xTe fully doped heterostructures without postgrowth anneal for uncooled MWIR and LWIR detectors", J. Electron. Mater. 36, 1052-1058 (2007).
7. G. K. O. Tsen, C. A. Musca, J. M. Dell, J. Antoszewski, and L. Faraone, "Magneto-transport characterization of p-type HgCdTe", J. Electron. Mater. 36, 826-831 (2007).
8. M. A. Kinch, Fundamentals of Infrared Detector Materials, SPIE Press, Bellingham, 2007.
9. T. Wong, MSc Dissertation, Massachusetts Institute of Technology, 1974.
10. E. C. Piquette, DD. Edwall, D. L. Lee, and J. M. Arias, "Precise arsenic doping of HgCdTe by MBE and effects on compositional interdiffusion", J. Electron. Mater. 35, 1346-349 (2006).
11. xTe", J. Electron. Mater. 33, 728-736 (2004).
12. L. Svob, I. Cheye, A. Lusson, D. Ballutaud, J. F. Rommeluere, and Y. Marfaing, "Crystallographic orientation dependence of As incorporation in MOVPE-grown CdTe and corresponding acceptor electrical state activation", J. Cryst. Growth 184/185, 459-464 (1998).
13. C. D. Maxey, M. U. Ahmed, P. Capper, C. L. Jones, N. T. Gordon, and M. White, "Investigation of parameters to obtain reduced Shockley-Read traps and near radiatively limited lifetimes in MOVPE-grown MCT", J. Mater. Sci-Mater. El. 11, 565-568 (2000).
14. D. D. Edwall, L. O. Bubulac, and E. R. Gertner, "p-type doping of metalorganic chemical vapor deposition - grown HgCdTe by arsenic and antimony", J. Vac. Sci. Technol. B10, 1423-1427 (1992).
15. P. Mitra, F. C. Case, and M. B. Reine, "Progress in MOVPE of HgCdTe for advanced infrared detectors", J. Electron. Mater. 27, 510-520 (1998).
16. S. Krishnamurthy and T. N. Casselman, "A detailed calculation of the Auger lifetime in p-type HgCdTe", J. Electron. Mater. 29, 828-831 (2000).
17. M. A. Kinch, F. Aqariden, D. Chandra, P. K Liao, H. F. Schaake, and H. D. Shih, "Minority carrier lifetime in p-HgCdTe", J. Electron. Mater. 34, 880-884 (2005).
18. V. C. Lopes, A. J. Syllaios, and M. C. Chen, "Minority carrier lifetime in mercury cadmium telluride", Semicond. Sci. Tech. 8, 824-841 (1993).
19. S. Krishnamurthy, M. A. Berding, Z. G. Yu, C. H. Swartz, T. H. Myers, D. D. Edwall, and R. DeWames, "Model for minority carrier lifetimes in doped HgCdTe", J. Electron. Mater. 34, 873-879 (2005).